MCH6544 Ordering number : EN8952 SANYO Semiconductors DATA SHEET MCH6544 NPN Epitaxial Planar Silicon Transistor Inverter Circuit / Driver Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Composite type with an NPN transistor contained in one package facilitating high-density mounting. Ultrasmall package facilitates miniaturization in end products. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 60 V Collector-to-Emitter Voltage VCBO VCEO 50 V Emitter-to-Base Voltage VEBO 5 Collector Current IC 500 Collector Current (Pulse) ICP Collector Dissipation PC When mounted on ceramic substrate (600mm2✕0.8mm) 1unit Total Power Dissipation PT Tj When mounted on ceramic substrate (600mm2✕0.8mm) Junction Temperature Storage Temperature Tstg V mA 1.5 A 0.5 W 0.55 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=40V, IE=0A 100 nA Emitter Cutoff Current IEBO hFE VEB=4V, IC=0A 100 nA DC Current Gain Gain-Bandwidth Product Output Capacitance fT Cob VCE=2V, IC=10mA 300 800 VCE=10V, IC=50mA 500 MHz VCB=10V, f=1MHz 2.8 pF Marking : ES Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408EA TI IM TC-00001383 No.8952-1/4 MCH6544 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=10μA, IE=0A IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO ton IE=10μA, IC=0A See specified Test Circuit. Storage Time min typ IC=100mA, IB=10mA IC=100mA, IB=10mA Collector-to-Base Breakdown Voltage Turm-ON Time Ratings Conditions Unit max 50 100 0.9 1.2 mV V 60 V 50 V 5 V 30 ns tstg See specified Test Circuit. 340 ns tf See specified Test Circuit. 55 ns Fall Time Package Dimensions Electrical Connection unit : mm (typ) 2.0 6 5 0.25 5 4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 1 2 3 Top view 4 0 to 0.02 1 2 3 0.65 0.3 0.85 0.07 6 0.15 2.1 1.6 0.25 7022A-011 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 220μF VBE= --5V + 470μF VCC=25V IC=20IB1= --20IB2=200mA No.8952-2/4 MCH6544 IC -- VCE 500 3mA 300 2mA 250 1mA 600μA 200 150 200μA 100 300 200 100 50 IB=0μA 400 500 600 700 900 800 Collector-to-Emitter Voltage, VCE -- mV 0 0 1000 0.8 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 100 7 5 3 2 1.2 IT05107 IC / IB=10 VCE=2V 25°C --25°C 5 0.6 VCE(sat) -- IC 3 Ta=75°C 7 0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 0.2 IT05106 2 100 7 Ta =7 5° C 300 5 3 25 °C 5° C 200 100 --2 0 0 DC Current Gain, hFE 400 Ta=7 5°C 25°C --25°C 350 8mA A 10m 20m 400 VCE=2V 5mA Collector Current, IC -- mA A 1 5m 7mA 30mA Collector Current, IC -- mA 450 IC -- VBE 600 A 500 2 10 7 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 25 °C Ta =7 5° C 5° C 7 3 2 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 100 2 3 IC / IB=50 3 2 100 75 7 25 5 °C = Ta °C C 5° --2 3 2 2 3 5 7 10 2 3 5 7 100 2 IT05110 Cob -- VCB 10 2 25°C 1.0 Ta= --25°C 7 75°C 5 f=1MHz Output Capacitance, Cob -- pF 3 3 5 7 1000 3 Collector Current, IC -- mA IC / IB=20 5 5 7 1000 IT05411 VCE(sat) -- IC IT05109 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 10 1.0 5 7 1000 VBE(sat) -- IC 10 2 7 100 3 5 7 10 1000 2 2 3 Collector Current, IC -- mA IC / IB=20 10 1.0 2 IT05108 --2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 5 1.0 5 7 1000 7 5 3 2 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05111 1.0 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 IT05112 No.8952-3/4 MCH6544 fT -- IC 1000 100 7 5 7 5 3 2 1kΩ OUT IN 1kΩ 2 IB 10 7 5 3 2 1.0 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC -- mA 3 5 7 1000 IT05113 PD -- Ta 0.6 Allowable Power Dissipation, PD -- W Ron -- IB f=1MHz 3 ON Resistance, Ron -- Ω Gain-Bandwidth Product, fT -- MHz VCE=10V 0.1 0.1 2 3 5 7 1.0 2 3 5 Base Current, IB -- mA 7 10 IT06092 When mounted on ceramic substrate (600mm2✕0.8mm) 0.55 0.5 0.4 To t al 0.3 di ss 1u ni t ip at io n 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10744 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No.8952-4/4