SANYO MCH6663

MCH6663
Ordering number : EN8758
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
MCH6663
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance Nch : RDS(on)1=145mΩ(typ.)
Pch : RDS(on)1=250mΩ(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
P-channel
Unit
30
--30
V
±20
±20
V
1.8
--1.5
A
7.2
--6
A
Allowable Power Dissipation
ID
IDP
PD
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Product & Package Information
unit : mm (typ)
7022A-006
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
6
5
0.15
Packing Type : TL
4
3
TL
0.3
0.85
0.25
2
0.65
XQ
LOT No.
1
LOT No.
0.07
Marking
0 t o 0.02
2.1
1.6
0.25
Package Dimensions
Electrical Connection
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
SANYO : MCPH6
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
D0711PE TKIM TC-00002677 No.8758-1/6
MCH6663
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.9A
1.1
RDS(on)1
ID=0.9A, VGS=10V
145
188
mΩ
RDS(on)2
ID=0.5A, VGS=4.5V
245
343
mΩ
RDS(on)3
ID=0.5A, VGS=4V
270
378
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
30
V
1.2
1
μA
±10
μA
2.6
V
S
88
pF
19
pF
Crss
11
pF
td(on)
tr
3.4
ns
3.6
ns
10.5
ns
VDS=10V, f=1MHz
See specified Test Circuit.
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=1.8A, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=15V, VGS=10V, ID=1.8A
4.0
ns
2.0
nC
0.33
nC
0.29
0.86
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
--1.2
--2.6
V
VDS=--10V, ID=--0.8A
1.3
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4.5V
250
325
mΩ
RDS(on)2
397
555
mΩ
RDS(on)3
ID=--0.4A, VGS=--4V
458
641
mΩ
RDS(on)1
Static Drain-to-Source On-State Resistance
--30
VDS=--30V, VGS=0V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
S
82
pF
22
pF
Crss
16
pF
Turn-ON Delay Time
td(on)
4.0
ns
Rise Time
tr
3.3
ns
Turn-OFF Delay Time
12
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--1.5A
5.4
ns
2.2
nC
0.36
nC
0.49
IS=--1.5A, VGS=0V
--0.9
nC
--1.5
V
No.8758-2/6
MCH6663
Switching Time Test Circuit
[N-channel]
VDD=15V
VIN
0V
--10V
ID=0.9A
RL=16.7Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
50Ω
ID -- VDS
[Nch]
4.5
V
4.0
V
6.0V
0.4
0.8
0.6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RDS(on) -- VGS
600
0.9
0.9A
400
350
300
250
200
150
100
50
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
14
16
IT16667
1.0
1.5
2.0
2.5
3.0
3.5
RDS(on) -- Ta
600
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=0.5A
0.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
450
0
IT16666
500
0
0
1.0
[Nch]
550
Ta=
7
0.2
VGS=2.5V
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1.0
0.4
3.0V
0.2
0
1.2
C
3.5V
1.4
25°
C
0.6
VDS=10V
5°C
Drain Current, ID -- A
0.8
[Nch]
1.6
8.0V
1.0
S
ID -- VGS
1.8
10.0V
1.2
50Ω
2.0
Ta=25°C
15.0V
Drain Current, ID -- A
1.4
MCH6663
P.G
S
1.8
1.6
VOUT
G
MCH6663
P.G
ID= --0.8A
RL=18.75Ω
VIN
--25
°
10V
0V
[P-channel]
4.0
IT13108
[Nch]
550
500
450
400
350
A
=0.5
V, I D
0
.
4
=
VGS
0.5A
, I D=
4.5V
=
V GS
=0.9A
0.0V, I D
V GS=1
300
250
200
150
100
50
0
--60
--40 --20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT16668
No.8758-3/6
MCH6663
| yfs | -- ID
[Nch]
VDS=10V
2
[Nch]
VGS=0V
1.0
7
5
3
°C
-25
=-
2
Ta
75
5°C
0.1
7
5
°C
2
3
2
3
2
0.1
7
5
Ta=
--25
°C
25°C
75°C
1.0
7
5
3
2
0.01
7
5
3
2
0.01
7
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
SW Time -- ID
5
0.001
0.2
5 7 1.0
IT13111
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
td(off)
10
7
tf
td(on)
tr
0.8
1.0
1.2
IT13112
[Nch]
f=1MHz
2
2
3
0.6
Ciss, Coss, Crss -- VDS
3
VDD=15V
VGS=10V
5
0.4
Diode Forward Voltage, VSD -- V
[Nch]
3
Switching Time, SW Time -- ns
IS -- VSD
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
2
Ciss
100
7
5
3
2
Coss
Crss
10
7
1.0
0.1
2
3
5
7
2
1.0
3
Drain Current, ID -- A
Drain Current, ID -- A
0.8
1.0
1.2
1.4
1.6
1.8
3
2
Total Gate Charge, Qg -- nC
[Pch]
5 7 0.1
2 3
5 7 1.0
2 3
5
10
ID -- VGS
--2.0
Ta=25°C
.0V
5V
--4
.
2 3
2 3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16670
[Pch]
VDS= --10V
--1.8
--4
0V
--6
.
V
--8.
0
--1.4
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
IT16669
ID -- VDS
--1.6
Operation in this
area is limited by RDS(on).
0.1
7
5
0.01
0.01
2.0
s
1.0
7
5
on
0.6
s
s
0.4
0μ
ati
0.2
ID=1.8A
er
0
10
1m
3
2
3
2
1
IDP=7.2A (PW≤10μs)
s
2
[Nch]
m
3
ASO
10
7
5
30
IT13114
op
4
25
0m
5
20
10
6
15
10
7
10
DC
Gate-to-Source Voltage, VGS -- V
[Nch]
8
0
5
Drain-to-Source Voltage, VDS -- V
VDS=15V
ID=1.8A
9
0
IT13113
VGS -- Qg
10
5
5
3.5V
--
--0.8
--0.6
--3.0V
--0.4
--1.4
--1.2
--1.0
--0.8
--0.6
Ta
=7
5°C
25
°C --25
°C
--1.0
Drain Current, ID -- A
.0V
--10
Drain Current, ID -- A
--1.6
--1.2
--0.4
--0.2
0
--0.2
VGS= --2.5V
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT16626
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.5
--4.0
IT16627
No.8758-4/6
MCH6663
900
ID= --0.4A
700
--0.8A
600
500
400
300
200
100
0
0
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
3
2
=
Ta
7
C
5°
--2
C
75°
5
°C
25
3
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
SW Time -- ID
100
5
2
td(off)
10
7
tf
td(on)
3
.4A
= --0
V, I D
5
.
4
=VGS
--0.8A
V, I D=
.0
0
1
-V GS=
300
200
100
--40
--20
0
20
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
--0.1
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
Ciss
5
3
10
Coss
Crss
0
--5
--10
--15
--20
ASO
s
Drain Current, ID -- A
s
on
IT16673
0μ
2
ati
3.0
m
3
er
Total Gate Charge, Qg -- nC
2.5
10
--1.0
7
5
op
2.0
ID= --1.5A
s
0m
1.5
s
1.0
[Pch]
IDP= --6A (PW≤10μs)
DC
0.5
--30
IT16633
10
--10
7
5
10
0
--25
Drain-to-Source Voltage, VDS -- V
--0.1
7
5
3
2
--1
[Pch]
7
1m
--2
--1.2
IT16631
f=1MHz
100
2
--3
--1.0
Ciss, Coss, Crss -- VDS
3
--4
[Pch]
2
--8
--5
160
IT16672
3
[Pch]
--6
140
5
5 7 --10
--7
120
7
VDS= --15V
ID= --1.5A
--9
100
--1.0
7
5
3
2
IT16632
VGS -- Qg
--10
80
VGS=0V
2
3
60
IS -- VSD
1000
tr
2
40
Diode Forward Voltage, VSD -- V
2
0
=
VGS
400
--0.001
[Pch]
VDD= --15V
VGS= --10V
3
1.0
--0.01
Gate-to-Source Voltage, VGS -- V
5 7 --10
IT16630
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
5
500
--0.01
7
5
3
2
2
0.1
--0.01
.4A
= --0
V, I D
--4.0
--10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Pch]
5
1.0
600
Ambient Temperature, Ta -- °C
VDS= --10V
7
700
IT16671
| yfs | -- ID
10
800
0
--60
--16
[Pch]
900
Ta=7
5°C
800
RDS(on) -- Ta
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
[Pch]
Ta=25°C
25°C
--25°C
RDS(on) -- VGS
1000
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0
2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT16674
No.8758-5/6
MCH6663
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
[Nch/Pch]
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16675
Note on usage : Since the MCH6663 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2011. Specifications and information herein are subject
to change without notice.
PS No.8758-6/6