SANYO PCP1204

PCP1204
Ordering number : ENA1350
SANYO Semiconductors
DATA SHEET
PCP1204
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
•
DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers.
Features
•
•
•
•
•
•
Adoption of FBET, MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
High allowable power dissipation.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
80
V
50
V
VEBO
IC
5
V
1.5
A
Base Current
ICP
IB
200
Collector Dissipation
PC
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Junction Temperature
Tj
Storage Temperature
Tstg
3
A
mA
When mounted on ceramic substrate (450mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
-55 to +150
°C
Marking : QK
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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N1208EA MS IM TC-00001724 No. A1350-1/4
PCP1204
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
VCB=40V, IE=0A
VEB=4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=2V, IC=100mA
VCE=10V, IC=300mA
Output Capacitance
Cob
VCE(sat)1
VCB=10V, f=1MHz
IC=0.5A, IB=10mA
VCE(sat)2
IC=0.3A, IB=6mA
VBE(sat)
V(BR)CBO
IC=0.5A, IB=10mA
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-On Time
Storage Time
typ
Unit
max
200
0.1
μA
0.1
μA
560
420
MHz
6
IE=10μA, IC=0A
See specified Test Circuit.
tstg
tf
Fall Time
min
IC=10μA, IE=0A
IC=1mA, RBE=∞
V(BR)CEO
V(BR)EBO
ton
Emitter-to-Base Breakdown Voltage
Ratings
Conditions
pF
130
190
mV
90
135
mV
0.81
1.2
V
80
V
50
V
5
V
35
ns
See specified Test Circuit.
330
ns
See specified Test Circuit.
40
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7007A-004
IB1
PW=50μs
D.C.≤1%
Top View
OUTPUT
IB2
INPUT
4.5
1.6
RB
1.5
RL
1
2
+
820μF
4.0
1.0
2.5
50Ω
VCC=25V
3
0.4
IC=20IB1= --20IB2=0.5A
0.4
0.5
1.5
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Bot t om View
IC -- VCE
VCE=2V
10mA
1.4
Collector Current, IC -- A
30m
8mA
6mA
0.6
4mA
2mA
0.4
0.2
1.2
1.0
0.8
0.6
Ta=7
5°C
25°C
--25°C
A 20
m
40m
A
50mA
Collector Current, IC -- A
0.8
IC -- VBE
1.6
A
1.0
0.4
0.2
0
IB=0mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector-to-Emitter Voltage, VCE -- V
0.9
1.0
IT14128
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT14129
No. A1350-2/4
PCP1204
hFE -- IC
5
Ta=75°C
3
25°C
2
--25°C
VCE=2V
7
5
3
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
2
100
7
5
2
3
5
7
0.1
2
3
5
7
3
2
10
7
5
2
1.0
Collector Current, IC -- A
3
IT01650
VCE(sat) -- IC
IC / IB=20
3
2
0.1
°C
25
7
5
5°C
7
Ta=
3
°C
--25
2
0.01
2
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
VCE(sat) -- IC
5
7
0.01
5 7 100
IT01652
Collector-to-Base Voltage, VCB -- V
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0
7
5
3
2
C
25°
°C
Ta=75
--25°C
3
2
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
Ta=--25°C
7
75°C
5
25°C
3
2
3
5
s
m
10 s
0m
era
op
s
1m
DC
tio
3
n(
2
C
5°
=2
Ta
)
0.1
7
5
Ta=25°C
Single pulse
When mounted on ceramic substrate (450mm2×0.8mm)
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Collector-to-Emitter Voltage, VCE -- V
3
5
7 1.0
2
3
IT14133
PC -- Ta
1.4
μs
100
s
0μ
50
10
1.0
7
5
2
When mounted on ceramic substrate
(450mm2×0.8mm)
<10μs
IC=1.5A
7 0.1
Collector Current, IC -- A
1.6
ICP=3A
2 3
1.0
IT14132
ASO
0.01
0.01
2
2
0.01
3
Collector Dissipation, PC -- W
0.01
0.01
3
IC / IB=50
IC / IB=50
2
0.1
7
5
2
IT14131
VBE(sat) -- IC
3
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
5
3
Collector Current, IC -- A
5
7
5
2
7
2
0.01
3
f=1MHz
7
3
1000
IT14130
Cob -- VCB
100
2
2
3
2
0.01
3
VCE=10V
3
100
5
f T -- IC
5
Gain-Bandwidth Product, f T -- MHz
DC Current Gain, hFE
7
1.3
1.2
1.0
0.8
0.6
0.4
0.2
5 7
IT14134
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14135
No. A1350-3/4
PCP1204
PC -- Tc
4.0
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT14136
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of November, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1350-4/4