SCH1433 Ordering number : ENA1594 SANYO Semiconductors DATA SHEET SCH1433 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V V Drain Current (DC) ID 3.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 14 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions typ Unit max Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS VDS=20V, VGS=0V VGS=±8V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 1.68 RDS(on)1 ID=1.5A, VGS=4.5V 49 64 RDS(on)2 ID=1A, VGS=2.5V 68 95 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 99 149 mΩ Static Drain-to-Source On-State Resistance ID=1mA, VGS=0V Ratings min Marking : ZJ 20 V 1 μA ±10 μA 1.3 2.8 V S mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N2509PE TK IM TC-00002213 No. A1594-1/4 SCH1433 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 260 pF 65 pF Crss VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 50 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6.2 ns Rise Time tr td(off) See specified Test Circuit. 19 ns ns Turn-OFF Delay Time See specified Test Circuit. 30 See specified Test Circuit. 28 ns Total Gate Charge tf Qg VDS=10V, VGS=4.5V, ID=3.5A 2.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=3.5A 0.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=3.5A 0.9 Diode Forward Voltage VSD IS=3.5A, VGS=0V Fall Time Package Dimensions 4.5V 0V V VDD=10V VIN 1.6 0.05 1.2 Switching Time Test Circuit unit : mm (typ) 7028-002 0.2 6 5 4 ID=1.5A RL=6.67Ω VOUT VIN 0.2 D PW=10μs D.C.≤1% 1.5 1.6 nC 0.85 3 0.5 0.56 2 0.25 0.05 G 1 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain P.G 50Ω S SCH1433 SANYO : SCH6 ID -- VDS 1.8 V VDS=10V 4 1.5 1.5V 1.0 2 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT15111 0 25 0 °C VGS=1.2V 0.5 --25 °C 2.0 3 5°C Drain Current, ID -- A 2.5 Ta= 7 3.0 ID -- VGS 5 8.0V Drain Current, ID -- A 3.5 4.5V 2.5V 6.0V 4.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT15112 No. A1594-2/4 SCH1433 RDS(on) -- VGS 180 ID=0.5A 160 1.0A 140 1.5A 120 100 80 60 40 20 0 0 2 4 6 8 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT15114 IS -- VSD VGS=0V 2 °C 25 5 3 3 2 C 7 --25 ° 1.0 1.0 7 5 0.1 7 5 25°C °C -25 =a °C T 75 5°C 2 Ta= 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 1.0A , I D= 2.5V = VGS 1.5A , I D= V 5 . 4 = VGS 80 7 5 3 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 5 0.4 0.6 0.8 1.0 1.2 IT15116 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 5 td(off) Ciss, Coss, Crss -- pF 3 tf 2 tr 10 7 td(on) 5 3 Ciss 2 100 Coss 7 5 Crss 3 2 3 0.1 2 3 5 7 2 1.0 Drain Current, ID -- A VGS -- Qg 5 3 5 10 7 3 2 10 7 5 Drain Current, ID -- A 3 2 1 3 2 2 Total Gate Charge, Qg -- nC 4 3 IT15119 6 8 10 12 14 16 ASO IDP=14A ID=3.5A 20 IT15118 ms 10 op 18 PW≤10μs 10 0μ 1m s s 10 DC 1.0 7 5 0m s era tio 3 2 n( Ta = Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 2 Drain-to-Source Voltage, VDS -- V VDS=10V ID=3.5A 0 0 IT15117 4 0 0.2 Diode Forward Voltage, VSD -- V VDD=10V VGS=4.5V 5 0 IT15115 SW Time -- ID 7 Switching Time, SW Time -- ns 100 3 0.1 0.01 Gate-to-Source Voltage, VGS -- V A 0.5 , I D= 1.8V = VGS Ambient Temperature, Ta -- °C VDS=10V 5 120 IT15113 | yfs | -- ID 7 140 0 --60 --40 10 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 160 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT15120 No. A1594-3/4 SCH1433 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15121 Note on usage : Since the SCH1433 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1594-4/4