SANYO SFT1431

SFT1431
Ordering number : ENA1624
SANYO Semiconductors
DATA SHEET
SFT1431
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
Motor drive application.
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
35
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
11
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
V
44
A
1.0
W
Allowable Power Dissipation
PD
15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
35
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs |
VDS=10V, ID=5.5A
5
RDS(on)1
ID=5.5A, VGS=10V
19
25
mΩ
RDS(on)2
ID=3A, VGS=4.5V
28
39.5
mΩ
RDS(on)3
ID=3A, VGS=4V
35
49
mΩ
Static Drain-to-Source On-State Resistance
Marking : T1431
1.2
1
μA
±10
μA
2.6
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
http://semicon.sanyo.com/en/network
D0209PA TK IM TC-00002143 No. A1624-1/4
SFT1431
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
td(off)
See specified Test Circuit.
40
ns
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
pF
130
pF
84
pF
See specified Test Circuit.
60
tf
Qg
See specified Test Circuit.
36
ns
VDS=20V, VGS=10V, ID=11A
17.3
nC
3.2
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=20V, VGS=10V, ID=11A
VDS=20V, VGS=10V, ID=11A
Diode Forward Voltage
VSD
IS=11A, VGS=0V
3.6
0.88
Package Dimensions
Package Dimensions
unit : mm (typ)
7518-004
unit : mm (typ)
7003-004
nC
1.2
V
2.3
2.3
5.5
0.5
0.6
2
3
2.3
2.3
7.5
2.5
0.8
0.8
1.6
0.85
1.2
1
0.5
2
3
0 t o 0.2
0.6
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
1.2
1.5
7.0
5.5
4
0.85
0.7
0.5
1.5
6.5
5.0
0.5
4
7.0
6.5
5.0
1
960
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Switching Time Test Circuit
10V
0V
VDD=15V
VIN
ID=5.5A
RL=2.7Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
SFT1431
50Ω
S
No. A1624-2/4
SFT1431
ID -- VDS
V
18
16
5
VGS=3.0V
4
3
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RDS(on) -- VGS
75
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
ID=5.5A
65
0.9
50
45
40
35
30
25
20
15
2
3
4
5
6
7
8
9
Tc=
2
C
75°
1.0
5
2
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
2
3
Ciss, Coss, Crss -- pF
td(off)
5
tf
2
td(on)
tr
10
10
5
7 1.0
2
3
5
Drain Current, ID -- A
7
10
0
2
25
50
75
100
125
3
IT15245
150
IT15242
IS -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
IT15244
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
1000
7
5
3
2
Coss
100
5
5
--25
VGS=0V
Single pulse
10
7
5
3
2
5
3
--2
5
15
7
2
°C
20
7
3
0.1
25
25
2
100
3
30
Diode Forward Voltage, VSD -- V
VDD=15V
VGS=10V
7
35
3
2
4.0
IT15240
A
=3.0
4.0, I D
=
VGS
3.0A
, I D=
4.5V
=
VGS
5.5A
, I D=
10.0V
=
VGS
40
IT15243
SW Time -- ID
3
3.5
45
0.01
7
5
3
2
0.001
7
3
0.1
3.0
Case Temperature, Tc -- °C
Source Current, IS -- A
3
°C
--25
2.5
Single pulse
3
2
25°C
2.0
50
IT15241
10
5
1.5
RDS(on) -- Tc
0
--50
VDS=10V
7
1.0
Gate-to-Source Voltage, VGS -- V
10 11 12 13 14 15 16
| yfs | -- ID
2
0.5
55
55
1
0
IT15239
3A
60
0
1.0
Tc=25°C
Single pulse
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- S
6
Tc=
75°C
25°
C
--25°
C
0.1
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
Drain-to-Source Voltage, VDS -- V
Switching Time, SW Time -- ns
8
2
Tc=25°C
Single pulse
1
10
10
4
2
0
12
5°C
6
14
°C
16.0
V
7
VDS=10V
Single pulse
Tc=
7
8
V
Drain Current, ID -- A
9
ID -- VGS
20
3.5
4.0
10.0
V 8
.0 V
10
Drain Current, ID -- A
6.0V
4.5V
11
3
Crss
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
35
IT15246
No. A1624-3/4
SFT1431
VGS -- Qg
9
PW≤10μs
10
0μ
s
Drain Current, ID -- A
4
3
2
DC 100m
op s
era
tio
n
s
5
ID=11A
3
2
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
2
0
2
4
6
8
10
12
14
Total Gate Charge, Qg -- nC
PD -- Ta
18
0.6
0.4
0.2
40
60
80
100
3
5
7 1.0
120
Ambient Temperature, Ta -- °C
140
160
IT15249
2
3
5
7 10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT15248
PD -- Tc
20
0.8
20
2
IT15247
1.0
0
Tc=25°C
Single pulse
0.1
0.1
Allowable Power Dissipation, PD -- W
1.2
16
s
1m
6
10
7
5
m
7
1
Allowable Power Dissipation, PD -- W
IDP=44A
3
2
8
0
ASO
100
7
5
VDS=20V
ID=11A
10
Gate-to-Source Voltage, VGS -- V
10
15
10
5
0
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
160
IT15250
Note on usage : Since the SFT1431 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1624-4/4