Ordering number : EN*A1476 Thick-Film Hybrid IC STK433-760-E 2-channel class AB audio power IC, 50W+50W Overview The STK433-760-E is a hybrid IC designed to be used in 50W × 50W (2-channel) class AB audio power amplifiers. Applications • Audio power amplifiers. Features • Miniature package (47.0mm × 25.6mm × 9.0mm) • Output load impedance: RL = 6Ω to 4Ω supported • Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection circuit constituted by monolithic ICs Series Models STK433-730-E STK433-760-E Output 1 (10%/1kHz) 30W×2 channels 50W×2 channels Output 2 (0.4%/20Hz to 20kHz) 15W×2 channels 35W×2 channels Max. rated VCC (quiescent) ±30V ±50V Max. rated VCC (6Ω) ±28V ±40V Max. rated VCC (4Ω) ±25V ±33V Recommended operating VCC (4Ω) ±18V Dimensions (excluding pin height) ±23V 47.0mm×25.6mm×9.0mm Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. 52709HKIM No. A1476-1/12 STK433-760-E Specifications Absolute Maximum Ratings at Ta = 25°C, Tc=25°C unless otherwise specified Parameter Symbol Maximum supply voltage Conditions Ratings VCC max (0) Stand-by ON or When no signal (Stand-by OFF) VCC max (1) When signals are present, RL≥6Ω VCC max (2) When signals are present, RL≥4Ω Unit ±50 V (*1) ±40 V (*1) ±33 V ±10 V Minimum operating supply voltage VCC min Stand-by pin maximum voltage VST max -0.3 to +5.5 V Output current IO (peak) 1ch, ton=25ms 5.0 A Thermal resistance θj-c Per power transistor 3.5 Per package Junction temperature Tj max IC substrate operating temperature Tc max Storage temperature Tstg 0.88 °C/W 150 °C 125 °C -30 to +125 °C Both the Tj max and Tc max conditions must be met. Operating Characteristics at Tc=25°C, RL=4Ω, Rg=600Ω, VG=30dB, non-inductive load RL, using constantvoltage power supply and specification test circuit, unless otherwise specified Conditions *2 Parameter Output power Total harmonic distortion Symbol *2 *2 Output power transistor f PO (W) Ratings unit VCC (V) (Hz) PO (1) ±23 20 to 20k 0.4 PO (2) ±23 1k 0.4 40 10 50 PO (3) ±23 1k THD (1) ±23 20 to 20k THD (2) ±23 1k ±23 1k 50 1k 1.0 Vsat saturation voltage Frequency characteristics *2 fL, fH ±23 Input impedance ri ±23 THD min (%) 5.0 33 1.0 5.0 +0 -3dB Rg=2.2kΩ ±28 No loading Output neutral voltage VN ±28 Pin 13 voltage when standby OFF VST ON *5 VST OFF *5 Pin 10 (latch operation ±23 Standby ±23 Operating IM ON detection pin) voltage In short-circuit *7 Substrate thermal protection protection mode TD *8 Overcurrent protection *8,*10 IO (peak) ±23 1k ±23 1k % V 20 to 50k Hz 55 ±28 ON 0.4 10 ICCO Pin 13 voltage when standby W 0.04 VNO *10 max 35 VG=30dB Quiescent current Output noise voltage typ RL=∞ kΩ 1.0 mVrms 15 30 60 mA -70 0 +70 mV 0.6 V 5.5 V 2.5 3.6 5.5 V 130 °C 6.0 A No. A1476-2/12 STK433-760-E [Remarks] *1: Maximum ratings are limits beyond which damage to the device may occur. Exceeding the maximum ratings, even momentarily, may cause damage to the hybrid IC. In SANYO Semiconductor's test processes, operation at the maximum supply voltage is checked. (Test conditions) VCC max (2)=±33V, RL=4Ω, f=1kHz, Po=35W, 1ch Drive, ton=25ms, Tc=25°C *2: For 1-channel operation *3: -Pre VCC (pin 7) must be connected to the lowest stable potential to prevent the current flowing into the pin 1 due to reverse bias, etc. *4: Thermal design must be implemented based on the conditions under which the customer’s end products are expected to operate on the market. *5: Use the hybrid IC so that the voltage applied to the stand-by pin (pin 13) never exceeds the maximum rating. The power amplifier is turned on by applying +2.5V to +5.5V to the stand-by pin (pin 13). *6: An output limiting circuit for H-IC overheating is incorporated to protect the hybrid IC from the heat generation exceeding the maximum rating. Thermal design must be implemented from the maximum loss Pd max and "Pd-Tc" derating curve based on the conditions under which the customer's end products are expected to operate on the market. When deviating from the "Pd-Tc" derating curve, the desired output is not obtained, but the prescribed output is generated again by reducing H-IC temperature to within the recommended operating region. *7: The load short-circuit protection is designed based on the specification test condition. The load short-circuit protection circuit is activated when it has detected an overcurrent in the output transistors. So if any deviation from the "Pd-Tc" derating curve occurs, the protection circuit is activated and the circuit shuts down in order to protect the output transistors. When the load short-circuit protection circuit has been activated and the circuit shuts down, approximately +5.5V of voltage will be placed at the MONITOR pin (pin 10) (normally 0V). The protection circuit operation is released by establishing the stand-by mode (pin 13: 0V). *8: The substrate temperature protection rating is the design guarantee value using the specification test circuit of SANYO Semiconductor. The output limiting circuit for H-IC overheating (*6) and the load short-circuit protection circuit (*7) are the only protection functions incorporated. The thermal design and overcurrent protection level must be verified based on the conditions under which the customer's end products are expected to operate on the market. *9: A thermoplastic adhesive resin is used to secure the case and aluminum substrate. For this reason, the hybrid IC must be fixed to the heat sink before soldering and mounted. The heat sink must be installed or removed at room temperature. *10: Use the designated transformer power supply circuit shown in the figure below for the measurement of allowable load shorted time and output noise voltage level. *11: Weight of independent hybrid IC: 12.2g Outer box dimensions: 452(D) × 325(W) × 192(H) mm DBA40C 10000μF +VCC + Designated transformer power supply (MG-200 equivalent) 500Ω + 500Ω -VCC 10000μF No. A1476-3/12 STK433-760-E Pc - Tc Pd - Tc 160 2-ch drive (same output rating) 140 100 Power Dissipation, Pd - W Power Transistor Dissipation, Pc - W 120 80 60 40 120 100 80 60 40 20 20 0 0 0 50 100 150 Operating Substrate Temperature, Tc - °C 0 50 100 150 Operating Substrate Temperature, Tc - °C ITF02668 ITF02669 Package Dimensions unit:mm (typ) 47.0 9.0 (R1.8) 1 15 4.0 3.6 2.0 (6.6) 17.6 12.8 5.0 25.6 41.2 14 2.0=28.0 0.5 0.4 2.9 5.5 No. A1476-4/12 STK433-760-E Internal Equivalent Circuit +VCC 3 +Pre VCC 8 Pre Driver CH2 Pre Driver CH1 IN ch1 11 NF ch1 12 + + - - 15 IN ch2 14 NF ch2 Stand-by Circuit -Pre VCC 1 - VCC 2 ch1- 5 4 6 7 ch2ch1+ ch2+ SUB 9 GND 10 Monitor 13 St-By Application Circuit Example STK433-760-E GND/ -Pre -VCC +VCC Ch1+ Ch1- Ch2+ Ch2- +Pre SUB Monitor IN/1 NF/1 St-by NF/2 IN/2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 R3 Stand-by Control (C5) R02 R01 +VCC (R4) C27 Detection Terminal R27 R28 C28 C04 C03 C01 GND R16 C02 R15 -VCC C14 R24 R23 C23 C13 R21 L12 Ch1 IN R11 R12 L11 R13 C11 R14 C12 C25 C26 R25 C21 GND R26 C22 Ch2 IN GND Ch1 OUT Ch2 OUT GND C24 R22 No. A1476-5/12 STK433-760-E Recommended Values for Application Parts (for the test circuit) Symbol R01, R02 R03 Recommen Description ded Value 100Ω - Larger than Smaller than Recommended Value Recommended Value Ripple filtering resistors (Fusible resistors are desirable) Decreased pass- Increased pass- (Used with C03, C04 to form a ripple filter.) through current at high through current at high frequencies. frequencies. Use a limiting resistor according to the stand-by control voltage in order to control the stand-by pin voltage VST within the rating. (R04) about 10kΩ Pull down resistance (at detection terminal use). - (min) 5.1kΩ Noise-absorbing resistors - - - - R11, 12 4.7Ω R13, 14 4.7Ω/1W R15, 16 56kΩ Used with R23 and R24 to determine the voltage gain VG. R21, 22 1kΩ Input filtering resistor R23, 24 1.8kΩ R25, 26 56kΩ Input bias resistors (Virtually determine the input impedance.) R27, 28 560Ω Oscillation prevention C01, 02 100μF Oscillation prevention Oscillation prevention VN offset (Ensure R15=R25, R16=R26 when changing.) - - Used with R15 and R16 to determine the voltage gain VG. (VG Likely to oscillate None should desirably be determined by the R23 and R24 value.) (VG<30dB) (VG≤42dB) - - Likely to oscillate • Insert the capacitors as close to the IC as possible to decrease - the power impedance for reliable IC operation (use of - electrolytic capacitors are desirable). C03, C04 100μF Decoupling capacitors. Increase in ripple components that pass into the • Eliminate ripple components that pass into the input side from input side from the power line. the power line. (Used with R01, R02 to form a filter.) (C05) About 0.1μF A constant is adjusted when detection voltage appears at the time of latch rise (at detection terminal use). C11, 12 0.1μF Oscillation prevention (Mylar capacitors are recommended.) Likely to oscillate C13, 14 15pF Oscillation prevention Likely to oscillate C21, 22 470pF Input filter capacitor (Used with R21 and R22 to form a filter that suppresses high- - - frequency noises.) C23, 24 2.2μF Input coupling capacitor (block DC current) C25, 26 10μF NF capacitor Increase in low- Decrease in low- (Changes the low cutoff frequency; fL=1/ (2π • C25 • R23) frequency voltage gain, frequency voltage gain - - with higher pop noise at power-on. C27, 28 120pF Oscillation prevention Likely to oscillate L11, 12 1μH Oscillation prevention None Likely to oscillate No. A1476-6/12 STK433-760-E Sample PCB Trace Pattern C04 Cut pattern of #10pin R04 C05 * Additional parts are indicated by CIRCUIT Location No. No. A1476-7/12 STK433-760-E STK433-760-E TEST Board PARTS LIST STK403-000sr/100sr/200sr PCB PCB Location No. CIRCUIT Location No. PARTS RATING R01 R01 ERG1SJ101 100Ω,1W R02,R03 R21, R22 RN16S102FK 1kΩ, 1/6W R05, R06, R08, R09 R15, R16, R25, R26 RN16S563FK 56kΩ, 1/6W R11, R12 R23, R24 RN16S182FK 1.8kΩ, 1/6W R14, R15 R11, R12 RN14S4R7FK 4.7Ω, 1/4W R17, R18 R13, R14 ERX1SJ4R7 4.7Ω, 1W R20, R21 - R34, R35 - - R27, R28 RN16S561FK 560Ω, 1/6W - R04 RN16S103FK 10kΩ, 1/6W - C05 ECQ-V1H104JZ 0.1μF, 50V C01, C02, C03 C01, C02, C03, C04 100MV100HC 100μF, 100V C05, C06 C23, C24 50MV2R2HC 2.2μF, 50V C07, C08 C21, C22 DD104-63B471K50 470pF, 50V C10, C11 C13, C14 DD104-63CJ150C50 15pF, 50V C13, C14 C25, C26 10MV10HC 10μF, 10V C16, C17 C11, C12 ECQ-V1H104JZ 0.1μF, 50V C19, C20 C27, C28 DD104-63B121K50 120pF, 50V L01, L02 L11, L12 Stand-By Tr1 Control Circuit D1 2SC2274 (Reference) 13kΩ, 1/6W R31 RN16S333FK 33kΩ, 1/6W R32 - R33 RN16S202FK 2kΩ, 1/6W C32 10MV33HC 33μF, 10V JS6 - - R02 ERG1SJ101 (*) - RN16S133FK - (*) VCE≥50V, IC≥10mA R03 J8, J9 short 1μH - J1, J2, J3, J4, J5, J6, JS1 - STK433-760-E 100Ω, 1W - Jumper - Jumper - • (*) Capacitor mark “A” side is “-” (negative). • R04, C04 and C05 does not have a location number on the PCB so the component must be mounted on the reverse side of the board. No. A1476-8/12 STK433-760-E Pin Assignments [STK433-730-E/-760-E Pin Layout] 1 2 3 4 5 6 (Size) 47.0mm×25.6mm×9.0mm 7 8 9 10 11 12 13 14 15 I N S N I N F T F N 16 17 18 19 2ch classAB/2.00mm STK433-730-E 30W×2ch/JEITA - - + O O O O + STK433-760-E 50W×2ch/JEITA P V V U U U U P S M R C C T T T T R U O / / A / / E C C / / / / E B N C C N C C C C C C / I H H H H H H G T 1 1 D | H H 2 2 1 1 2 2 N O B + - + - D R Y 100 7 5 3 2 THD - PO 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.1 f=20 kHz f=1 kHz 2 3 5 7 1.0 2 3 5 7 10 2 3 Output Power, PO/ch - W 90 Output Power, PO/ch - W 80 70 0% 30 20 1 ( f= z) kH 1 (f= z) kH 50 40 30 20 10 15 2 3 5 7 1.0 2 3 5 7 10 2 3 Output Power, PO/ch - W 5 7 100 ITF02671 PO - f 60 20 25 Supply Voltage, VCC - ±V 30 35 ITF02672 THD=10% 50 THD=0.4% 40 30 20 10 10 0 10 60 80 =1 .4% D z) 0 H T 0kH D= 2 H = (f T .4% =0 D TH 40 70 70 60 50 80 ITF02670 PO - VCC RL=4Ω 2ch Drive VG=30dB Rg=600Ω Tc=25°C VCC=±23V RL=4Ω 2ch Drive f=1kHz VG=30dB Rg=600Ω Tc=25°C 90 0 0.1 5 7 100 Output Power, PO/ch - W 100 Pd - PO 100 VCC=±23V RL=4Ω 2ch Drive VG=30dB Rg=600Ω Tc=25°C Total power dissipation on PCB, Pd - W Total Harmonic Distortion, THD - % Evaluation Board Characteristics 0 10 VCC=±23V RL=4Ω 2ch Drive VG=30dB Rg=600Ω Tc=25°C 2 3 5 7 100 2 3 5 7 1k 2 3 Frequency, f - Hz 5 7 10k 2 3 5 7100k ITF02673 No. A1476-9/12 STK433-760-E [Thermal Design Example for STK433-760-E (RL = 4Ω)] The thermal resistance, θc-a, of the heat sink for total power dissipation, Pd, within the hybrid IC is determined as follows. Condition 1: The hybrid IC substrate temperature, Tc, must not exceed 125°C. Pd × θc-a + Ta < 125°C ................................................................................................. (1) Ta: Guaranteed ambient temperature for the end product Condition 2: The junction temperature, Tj, of each power transistor must not exceed 150°C. Pd × θc-a + Pd/N × θj-c + Ta < 150°C .......................................................................... (2) N: Number of power transistors θj-c: Thermal resistance per power transistor However, the power dissipation, Pd, for the power transistors shall be allocated equally among the number of power transistors. The following inequalities result from solving equations (1) and (2) for θc-a. θc-a < (125 − Ta)/Pd ...................................................................................................... (1)' θc-a < (150 − Ta)/Pd − θj-c/N ........................................................................................ (2)' Values that satisfy these two inequalities at the same time represent the required heat sink thermal resistance. When the following specifications have been stipulated, the required heat sink thermal resistance can be determined from formulas (1)' and (2)' . • Supply voltage VCC • Load resistance RL • Guaranteed ambient temperature Ta [Example] When the IC supply voltage, VCC, is ±23V and RL is 4Ω, the total power dissipation, Pd, within the hybrid IC, will be a maximum of 52W at 1kHz for a continuous sine wave signal according to the Pd-PO characteristics. For the music signals normally handled by audio amplifiers, a value of 1/8PO max is generally used for Pd as an estimate of the power dissipation based on the type of continuous signal. (Note that the factor used may differ depending on the safety standard used.) This is: Pd = 38.0W (when 1/8PO max. = 6.25W). The number of power transistors in audio amplifier block of these hybrid ICs, N, is 4, and the thermal resistance per transistor, θj-c, is 3.5°C/W. Therefore, the required heat sink thermal resistance for a guranteed ambient temperature, Ta, of 50°C will be as follows. From formula (1)' θc-a < (125 − 50)/38.0 < 1.92 From formula (2)' θc-a < (150 − 50)38.0 − 3.5/4 < 1.75 Therefore, the value of 1.75°C/W, which satisfies both of these formulae, is the required thermal resistance of the heat sink. Note that this thermal design example assumes the use of a constant-voltage power supply, and is therefore not a verified design for any particular user’s end product. No. A1476-10/12 STK433-760-E STK433-760-E Stand-by Control & Mute Control Application STK433-760-E VST Ch1 -PRE -VCC +VCC OUT 1 2 3 SUB/ Ch2 Ch2 Ch1 OUT OUT +PRE GND MONITOR IN Ch1 OUT 4 6 5 7 8 9 10 11 Ch1 Ch2 NF ST-BY NF Ch2 IN 12 15 13 14 TR1 R31 Stand-by Control(ex) H: Operation Mode(+5V) L: Stand-by Mode(0V) R03 C32 R33 Ch2 IN 10kΩ GND 10kΩ Ch1 IN 10kΩ (0.1μF) MONITOR +VCC (10kΩ) Mute Control H: Single Mute L: Normal 2.2kΩ Ch2 OUT GND Stand-by Control GND +5V GND -VCC Ch1 OUT +5V Mute Control MUTE ST-BY PLAY MUTE ST-BY [The example of use STK433-*00series Stand-by control circuit] Features • By using the recommended stand-by control application, the pop noise level when the power is turned on/off can be significantly reduced. • By adjusting the limiting resistance (*2) in accordance with the voltages of the microcontroller and other components used, it is possible to perform stand-by control, facilitating the finished product design effort. (ex) STK433-*00series test circuit. When impressed by Stand-by control control [+5V]. VST 33kΩ Stand-by control circuit part H: Operation mode (+5V) L: Stand-by mode (0V) 1kΩ (*1) ΔVBE 1 2 3 4 5 6 -PRE -VCC +VCC Ch1 OUT Ch1 OUT Ch2 OUT 7 8 9 10 11 Ch2 +PRE SUB/ MONITOR Ch1 OUT IN GND 12 13 Ch1 ST-BY NF 14 Ch2 NF 4.3kΩ (*2) 15 Ch2 IN 33μF (min) (*3) 2kΩ (*4) ex) VST=(Stand-by Control-VBE*2)× (*2)/((*1)+(*2))+VBE =(5V-0.6V*2)×4.3kΩ/(4.3kΩ+1kΩ)+0.6V ≈3.68(V) ΔVBE STK433-*00series Stand-by Circuit in Pre Driver IC Operation Explanation 1) About VST (#13pin Stand-by Threshold) <1> Operation Mode When pin 13 reference voltage VST is equal to or greater than 2.5V, the stand-by circuit is set off, and the amplifier is set to the operation mode. <2> Stand-by Mode When pin 13 reference voltage VST is equal to or less than 0.6V, the stand-by circuit is set off, and the amplifier is set to the stand-by mode. (*3) The pop noise that occurs when the power is turned ON is reduced by providing a time constant using a capacitor during operation. (*4) The pop noise level is reduced by discharging the capacitor with a resistor in the stand-by mode. No. A1476-11/12 STK433-760-E SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2009. Specifications and information herein are subject to change without notice. PS No. A1476-12/12