SANYO VEC1107

VEC1107
Ordering number : ENA1389
SANYO Semiconductors
DATA SHEET
VEC1107
PNP Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
•
Charge line switching, load switching, high speed switching.
Features
•
•
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.75mm).
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
-30
V
-30
V
VEBO
IC
-5
V
-3
A
ICP
IB
Junction Temperature
PC
Tj
Storage Temperature
Tstg
-5
-600
When mounted on ceramic substrate (900mm2×0.8mm)
A
mA
1.3
W
150
°C
-55 to +150
°C
Marking : EG
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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D2408EA MS IM TC-00001781 No. A1389-1/4
VEC1107
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
IECO
Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-On Time
Storage Time
VEC= -4.5V, IB=0A
VCE= -2V, IC= -500mA
VCE(sat)1
VCB= -10V, f=1MHz
IC= -1.5A, IB= -30mA
VCE(sat)2
VBE(sat)
V(BR)CBO
200
0.25
pF
IC= -1.5A, IB= -75mA
-105
-155
mV
IC= -1.5A, IB= -30mA
-0.83
-1.2
IC= -10μA, IE=0A
IC= -1mA, RBE=∞
IE= -10μA, IC=0A
See specified Test Circuit.
V
-30
V
-30
V
-5
V
50
ns
See specified Test Circuit.
270
ns
See specified Test Circuit.
25
ns
0.15
IB1
Vout
IB2
INPUT
RB
VR
2.3
2.8
MHz
mV
50Ω
RL
+
+
100μF
0.25
μA
560
-230
6 5
3
μA
-1
Switching Time Test Circuit
0.3
2
μA
-0.1
25
PW=20μs
D.C.≤1%
1
-0.1
380
unit : mm (typ)
7012-011
7
Unit
max
-155
Package Dimensions
8
typ
VCE= -10V, IC= -500mA
tstg
tf
Fall Time
min
VCB= -30V, IE=0A
VEB= -4V, IC=0A
V(BR)CEO
V(BR)EBO
ton
Emitter-to-Base Breakdown Voltage
Ratings
Conditions
4
470μF
VBE=5V
0.65
VCC= --12V
IC=--20IB1=20IB2=--2.5A
0.75
2.9
0.07
1 : Emitter
2 : Emitter
3 : Emitter
4 : Base
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : VEC8
IC -- VCE
--10mA
VCE= --2V
--3.5
--8mA
--4mA
--0.8
--2mA
--0.4
--3.0
--2.5
--2.0
--1.5
Ta=7
5°C
25°C
--25°C
A
--6mA
Collector Current, IC -- A
mA
--3
0
mA
0
--2
--1.6
--1.2
IC -- VBE
--4.0
--50m
Collector Current, IC -- A
--40
mA
--2.0
--1.0
--0.5
0
IB=0mA
0
--200
--400
--600
--800
Collector-to-Emitter Voltage, VCE -- V
--1000
IT01743
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
IT01744
No. A1389-2/4
VEC1107
hFE -- IC
1000
5
Ta=75°C
3
25°C
--25°C
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
7
100
7
5
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT01745
Collector Current, IC -- A
VCB(sat) -- IC
3
2
--0.1
7
5
75°C
Ta=
°C
--25
3
2
2
3
5 7 --0.1
2
C
25°
3
5 7 --1.0
2
3
Gain-Bandwidth Product, f T -- MHz
5
3
2
5
7
5 7 --0.1
2
--10
3
Collector-to-Base Voltage, VCB -- V
--1.0
Ta= --25°C
7
5
75°C
s
Collector Dissipation, PC -- W
0μ
era
tio
3
2
n
--0.1
7
5
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Collector-to-Emitter Voltage, VCE -- V
3
25°C
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT01748
f T -- IC
VCE= --10V
5
3
2
100
7
5
3
2
2
3
5
7 --100
2
3
5
7 --1000
2
3
IT01750
PC -- Ta
When mounted on ceramic substrate
(900mm2×0.8mm)
1.4
op
5 7 --10
IT01746
2
Collector Current, IC -- mA
10
DC
3
3
10
--10
5
s
0μ
s
1m
--1.0
7
5
10 ms
0m
s
50
2
2
5
ICP= --5A
10
5 7 --1.0
IC / IB=50
1.6
IC= --3A
3
VBE(sat) -- IC
IT01749
Forward Bias A S O
2
7
7
3
3
1000
100
2
2
Collector Current, IC -- A
f=1MHz
10
--1.0
3
2
--0.1
--0.01
5 7 --10
IT01747
Cob -- VCB
2
°C
25
°C
--25
7
--1.0
7
5
Collector Current, IC -- A
Output Capacitance, Cob -- pF
5°C
7
Ta=
3
2
Collector Current, IC -- A
IC / IB=50
--0.01
--0.01
Collector Current, IC -- A
--0.1
7
5
--10
3
2
3
2
3
2
--0.001
--0.01
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--10
7
5
3
IC / IB=20
--0.01
7
5
3
--10
7
5
VCE(sat) -- IC
--1.0
7
5
VCE= --2V
1.3
1.2
1.0
0.8
0.6
0.4
0.2
5
IT14312
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14313
No. A1389-3/4
VEC1107
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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mentioned above.
This catalog provides information as of December, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1389-4/4