VEC1106 Ordering number : ENA1344 SANYO Semiconductors DATA SHEET VEC1106 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Charge line switching, load switching, high speed switching. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim (0.75mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO -30 V -30 V VEBO IC -6 V -6 A -8 A ICP IB Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (900mm2×0.8mm) -1.2 A 1.3 W 150 °C -55 to +150 °C Marking : EC Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1208EA MS IM TC-00001705 No. A1344-1/4 VEC1106 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB= -30V, IE=0A VEB= -4V, IC=0A IECO VEC= -4.5V, IB=0A VCE= -2V, IC= -500mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Ratings Conditions min typ Unit max -0.1 μA -0.1 μA -1 μA 200 560 VCE= -10V, IC= -500mA 250 MHz VCE(sat)1 VCB= -10V, f=1MHz IC= -2.5A, IB= -50mA VCE(sat)2 VBE(sat) V(BR)CBO IC= -10μA, IE=0A -30 V V(BR)CEO V(BR)EBO IC= -1mA, RBE=∞ -30 V IE= -10μA, IC=0A -6 See specified Test Circuit. 30 Storage Time ton tstg See specified Test Circuit. 190 ns Fall Time tf See specified Test Circuit. 17 ns Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time 52 -180 mV IC= -3A, IB= -60mA -140 -210 mV IC= -2.5A, IB= -50mA -0.81 -1.2 V Package Dimensions 0.25 0.3 0.15 Vout IB2 INPUT 6 5 RB VR 50Ω 2.3 2.8 IB1 PW=20μs D.C.≤1% 7 V RL + + 0.25 100μF 1 2 3 ns Switching Time Test Circuit unit : mm (typ) 7012-011 8 pF -120 4 470μF VBE=5V 0.65 VCC= --12V IC=--20IB1=20IB2=--2.5A 0.75 2.9 0.07 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : VEC8 IC -- VCE --20mA --10mA --2 --1 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.6 --0.7 --25°C -- --1 0 --3 --0.9 30mA 25°C A VCE= --2V Ta=75°C m --60 0m A --4 A 0m --7 IC -- VBE --1.0 A --50m A 0 --4 m Collector Current, IC -- A A --8 0m A --9 0m Collector Current, IC -- A --5 --0.2 --0.1 0 IB=0mA 0 --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE -- V --0.5 IT14099 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.8 Base-to-Emitter Voltage, VBE -- V --0.9 IT08035 No. A1344-2/4 VEC1106 hFE -- IC 1000 VCE= --2V Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE Ta=75°C 25°C 3 --25°C 2 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Cob -- VCB 3 3 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 5 IC / IB=20 2 7 3 IT08039 VCB(sat) -- IC 3 f=1MHz 100 2 Collector Current, IC -- A 2 Output Capacitance, Cob -- pF 5 10 --0.01 5 7 --10 IT14100 Collector Current, IC -- A VCE= --10V 7 7 5 f T -- IC 1000 --0.1 7 C 5° 5 ° 25 3 C =7 Ta C 5° --2 2 --0.01 7 10 --1.0 2 3 5 7 2 --10 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --0.1 C 25° 5 5°C Ta=7 3 5°C --2 2 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC 2 3 7 3 Collector Current, IC -- A IC / IB=50 5 2 IT08041 VCE(sat) -- IC 7 5 --0.01 5 5 7 --10 IT14101 IC / IB=50 --1.0 Ta= --25°C 25°C 75°C 7 5 3 --0.01 2 3 5 7 --0.1 2 3 2 5 7 --1.0 3 Collector Current, IC -- A ASO 2 Collector Current, IC -- A DC --1.0 7 5 3 2 m s 1m s 10 op 0m er ati s on (T a= 25 °C ) 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 2 3 5 7 --1.0 2 PC -- Ta 3 5 7 --10 IT14103 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 1.3 --0.1 7 5 3 2 3 Collector Current, IC -- A <10μs 10 μs 500μs 3 2 ICP= --8A IC= --6A 2 1.4 100 --10 7 5 2 --0.01 5 7 --10 IT14102 Collector Dissipation, PC -- W 7 --0.01 5 IT14104 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14105 No. A1344-3/4 VEC1106 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No. A1344-4/4