2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A A L 3 3 MECHANICAL DATA C B Top View 1 Case: SC-59, Weight: 0.008 grams(approx.) 1 2 K E 2 D CLASSIFICATION OF hFE Product-Rank 2SB1197K-Q 2SB1197K-R Range 120~270 180~390 Marking AHQ AHR F REF. A B C D PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch H G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 E 1.70 2.30 F 0.35 0.50 J G H J K Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 L 0.85 REF. 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector to Base Voltage Parameter VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -800 mA Total Power Dissipation Pc 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -40 - - V IC=-50μA Collector-emitter breakdown voltage BVCEO -32 - - V IC=-1mA Emitter-base breakdown voltage BVEBO -5 - - V IE=-50μA ICBO - - -0.5 μA VCB=-20V Collector cut-off current Test Conditions IEBO - - -0.5 μA VEB= -4V VCE(sat) - - -0.5 V IC=-500mA, IB=-50mA DC current gain hFE 120 - 390 Transition frequency fT 50 200 - MHz COB - 12 30 pF Emitter cut-off current Collector-emitter saturation voltage Collector output capacitance http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. C VCE=-3V, IC=-100mA VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SB1197K Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 2 of 2