SK 75 GARL 065 E
Absolute Maximum Ratings
Symbol Conditions
IGBT
23(
2%3(
$
$+
# - ./ 01 # - ./ 85 09
; < 9 # - ./ 85 09
#=
Values
Units
455
6 .5
85 //
<45 <<5
2
2
:
:
! >5 ??? @ </5
0
<5A 4B
.54 <A8
:
:
! >5 ??? @ </5
0
Freewheeling CAL diode
SEMITOP
®3
IGBT Module
SK 75 GARL 065 E
Preliminary Data
Features
!
"#! ! $%#
&
' Typical Applications
(
(
)"(
"*
+, $,
$*
$*+ - ! $+
# - ./ 85 09
; < 9 # - ./ 85 09
#=
#
#
#1 <5 ! >5 ??? @ <./
.45
0
0
2
: /5 C1 ??? < ? D < ./55 D A555
2
Characteristics
Symbol Conditions
IGBT
23
2%3
E=!
$ - 45 :1 #= - ./ <./ 0
23 - 2%39 $ - 5155.< :
23 - ./ 29 2%3 - 5 29 < +C
$%#
# - ./ 01 min.
typ.
max.
>1/
<18 <1B
/1/
>1/
41/
514
H
2 - A55 2 1 2%3 - 6</ 2
$ - <55 :1 #= - <./ 0
E% - E% - <A I
3 @ 3
$
, Units
2
2
*
FDG
FDG
/>
/8
><5
A4
/1>/
J
<1>/ <1>
51B
/
B
2
2
I
514
FDG
Freewheeling CAL diode
2* - 23
2#
#
$* - 45 :9 #= - ./ <./ 0
#= - <./ 0
#= - <./ 0
E=!
$EE+
K
H
$* - <55 :9 2E - A55 2
$*D - !B.55 :DL
B.
B1<
:
L
3
2%3 - 5 29 #= - <./ 0
<18/
J
Mechanical data
+<
M
.1/
A5
(3+$#"N A
#//
GARL - E
1
20-10-2005 RAM
© by SEMIKRON
SK 75 GARL 065 E
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
20-10-2005 RAM
© by SEMIKRON
SK 75 GARL 065 E
Fig.11 Typ. switching times vs. IC
3
Fig.12 Typ. switching times vs. gate resistor RG
20-10-2005 RAM
© by SEMIKRON
SK 75 GARL 065 E
Dimensions in mm
#//
()%%3(#3 '3$:+3#3E *E #3 ('3E "$ ( : #3 +) #$ % "$ ( $ #3
"H . #//
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-10-2005 RAM
© by SEMIKRON