SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM VGES SKiM® 93 tpsc Trench IGBT Modules SKiM459GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1350 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 438 A Ts = 70 °C 347 A 450 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2430 A -40 ... 175 °C Tj Module It(RMS) Visol AC sinus 50 Hz, t = 1 min 700 A -40 ... 125 °C 2500 V Characteristics Symbol IGBT VCE(sat) Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Tterminal = 80 °C Tstg VCE0 rCE Conditions IC = 450 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 2.3 2.7 m Tj = 150 °C VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf Eoff Rth(j-s) VCC = 600 V IC = 450 A RG on = 1.3 RG off = 1.3 di/dton = 8340 A/µs di/dtoff = 3660 A/µs Tj = 25 °C 5 3.4 3.7 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA f = 1 MHz 26.40 nF f = 1 MHz 1.74 nF f = 1 MHz 1.41 nF 2550 nC 1.7 Tj = 150 °C 276 ns Tj = 150 °C 55 ns Tj = 150 °C 22 mJ Tj = 150 °C 538 ns Tj = 150 °C 114 ns Tj = 150 °C 57 per IGBT mJ 0.092 K/W GD © by SEMIKRON Rev. 3 – 14.07.2011 1 SKiM459GD12E4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF SKiM® 93 IRRM Trench IGBT Modules SKiM459GD12E4 Qrr Err Rth(j-s) • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Tj = 25 °C Tj = 150 °C typ. max. Unit 2.1 2.5 V 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 1.4 1.9 2.1 m 2.6 2.8 m Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 8880 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 2.2 570 A 80 µC 40 mJ 0.155 K/W Module LCE RCC'+EE' Features min. 10 terminal-chip 15 nH Ts = 25 °C 0.3 m Ts = 125 °C 0.5 m 1042 g w Temperature sensor R100 TSensor = 100 °C (R25 = 5 k) 339 B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives GD 2 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM459GD12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 14.07.2011 3 SKiM459GD12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM459GD12E4 SKIM 93 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 14.07.2011 5