SKM75GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 114 A Tc = 80 °C 87 A 75 A ICnom ICRM SEMITRANS® 2 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V 225 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 97 A Tc = 80 °C 73 A 75 A Tj = 125 °C Inverse diode IF SKM75GB12V Tj = 175 °C IFnom Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders IFRM IFRM = 3xIFnom 225 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 430 A -40 ... 175 °C Tj Module It(RMS) Visol • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° AC sinus 50Hz, t = 1 min 200 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Remarks Tterminal = 80 °C Tstg rCE Conditions IC = 75 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 3 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) VCE = 25 V VGE = 0 V min. typ. max. Unit Tj = 25 °C 1.85 2.30 V Tj = 150 °C 2.25 2.55 V Tj = 25 °C 0.94 1.04 V Tj = 150 °C 0.88 0.98 V Tj = 25 °C 12.13 16.8 m 18.27 20.93 m 6 6.5 V 0.1 0.3 mA Tj = 150 °C 5.5 Tj = 25 °C Tj = 150 °C 4.5 nF f = 1 MHz 0.44 nF f = 1 MHz 0.442 nF 830 nC VGE = - 8 V...+ 15 V VCC = 600 V IC = 75 A VGE = ±15 V RG on = 1.3 RG off = 1.3 di/dton = 3900 A/µs di/dtoff = 1020 A/µs du/dtoff = 9000 V/ µs per IGBT mA f = 1 MHz Tj = 150 °C 10.0 258 ns Tj = 150 °C 32 ns Tj = 150 °C 6.7 mJ Tj = 150 °C 388 ns Tj = 150 °C 62 ns Tj = 150 °C 7.1 mJ 0.38 K/W GB © by SEMIKRON Rev. 5 – 23.03.2011 1 SKM75GB12V Characteristics Symbol Conditions Inverse diode VF = VEC IF = 75 A VGE = 0 V chip VF0 IRRM Qrr Err Rth(j-c) typ. max. Unit Tj = 25 °C 2.17 2.49 V Tj = 150 °C 2.11 2.42 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 11.6 13.2 m Tj = 150 °C IF = 75 A Tj = 150 °C di/dtoff = 2950 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 16.1 17.6 m TC = 25 °C 0.65 m TC = 125 °C 1 m rF SEMITRANS® 2 min. 85 A 10 µC 4.2 mJ 0.58 K/W Module SKM75GB12V LCE RCC'+EE' Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt 30 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 0.04 to terminals M5 nH 0.05 K/W 3 5 Nm 2.5 5 Nm Nm w 160 g Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 5 – 23.03.2011 © by SEMIKRON SKM75GB12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 5 – 23.03.2011 3 SKM75GB12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 5 – 23.03.2011 © by SEMIKRON SKM75GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 5 – 23.03.2011 5