ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol 2SD1616 Collector Base Voltage VCBO 2SD1616A Collector Emitter Voltage 2SD1616 60 Unit V 120 VCEO 2SD1616A Emitter Base Voltage Value 50 V 60 VEBO 6 V IC 1 A IC 2 A Ptot 0.75 W Junction Temperature Tj 150 ℃ Storage Temperature Range TS -55 to +150 ℃ Collector Current (DC) Collector Current (pulse) 1) Power Dissipation 1) PW≦10ms, Duty Cycle≦50% SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SD1616 / 2SD1616A Characteristics at Tamb=25 OC DC Current Gain Symbol Min. Typ. Max. Unit R hFE 135 - 270 - O hFE 200 - 400 - Y hFE 300 - 600 - hFE 81 - - - VBE 600 700 mV ICBO - - 100 nA IEBO - - 100 nA VCE(sat) - 0.15 0.3 V VBE(sat) - 0.9 1.2 V fT 100 160 - MHz COB - 19 - pF ton - 0.07 - µs 2) at VCE=2V, IC=100mA at VCE=2V, IC=1A Base Emitter Voltage 2) at VCE=2V ,IC=50mA Collector Cutoff Current at VCB=60V/120V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage 2) at IC=1A, IB=50mA Base Saturation Voltage 2) at IC=1A, IB=50mA Gain Bandwidth Product at VCE=2V, IC=-100mA Output Capacitance at VCB=10V, f=1MHz Turn-on Time at VCC=10V, IC=-100mA Storage Time IB1=-IB2=10 mA tstg - 0.95 - µs Fall Time VBE(off)=-2 to 3 V tf - 0.07 - µs 2) Pulsed PW≦350µs, Duty Cycle≦2% SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002