1N5908 SM5908 TRANSILTM FEATURES UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 1500 W (10/1000µs) REVERSE STAND OFF VOLTAGE : 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908 and SM5908 are dedicated to the 5 V logiccircuit protection(TTL and CMOS technologies). Their low clamping voltage at high current level guarantees excellent protection for sensitive components. CB429 SMC ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C). Symbol PPP Parameter Peak pulse power dissipation (see note1) Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 75°C IFSM Non repetitive surge peak forward current for unidirectional types tp = 10ms Tj initial = Tamb Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s (at 5mm from case for CB429) P CB429 SMC Value Unit 1500 W 5 W 200 A - 65 to + 175 175 °C °C 230 260 °C °C Value Unit Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Rth (j-l) Junction to leads Rth (j-a) Junction to ambient on printed circuit. August 1999 Ed : 2A L lead = 10 mm On recommended pad layout 20 °C/W CB429 75 °C/W SMC 75 °C/W 1/6 1N5908/SM5908 ELECTRICAL CHARACTERISTICS(Tamb = 25°C) I Symbol Parameter VRM Stand-offvoltage VBR Breakdown voltage VCL Clamping voltage IF VCL VBR Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage IPP Types IRM @ VRM VBR @ IR VCL @ IPP VCL @ IPP VCL @ IPP max min max max max 10/1000µs 10/1000µs 10/1000µs note2 1N5908 SM5908 % IPP C max typ note3 note4 -4 V V mA V A V A V A 10 /°C pF 300 5 6 1 7.6 30 8 60 8.5 120 5.7 9500 Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). 10 µs 1000 µ s Note 2 : Pulse test : tp < 50ms Note 3 : Note 4 : ∆VBR = αT*(Tamb-25)* VBR (25°C). VR = 0V, F = 1 MHz 2/6 αT µA 50 0 V IRM IRM 100 VF VRM t 1N5908/SM5908 Fig. 2 : Peak pulse power versus exponential pulse duration. Fig. 3 : Clamping voltage versus peak pulse current. Exponential waveform tp = 10 ms............... tp = 1 ms------------tp = 20 µs________ Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆VBR = αT *(Tamb - 25) * VBR (25°C). 3/6 1N5908/SM5908 Fig. 4 : Capacitance versus reverse applied voltage (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current. Fig. 6a/6b : Transient thermal impedance junction-ambientversus pulse duration. Fig. 6a : CB429 Package. (For FR4 PC Board with L lead = 10 mm) Fig. 7 : Relative variation of leakage current versus junction temperature. 4/6 Fig. 6b : SMC Package. Mounting on FR4 PC Board with recommended pad layout. 1N5908/SM5908 ORDER CODE 1N5908 RL SM 5908 Device code Numerical code Surface mount Packaging : = Ammopack tape RL = Tape and reel MARKING : Logo, type code and cathode band Package Type Marking SMC SM5908 MDC CB429 1N5908 1N5908 A white band indicates the cathode PACKAGE MECHANICAL DATA SMC (Plastic) DIMENSIONS REF. E1 D E Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 A1 A2 C E2 L b FOOT PRINT (in millimeters) 3.3 2.0 4.2 2.0 Packaging : Standardpackagingis in tape and reel. Weight = 0.25 g. 5/6 1N5908/SM5908 PACKAGE MECHANICAL DATA CB429 (Plastic) REF. DIMENSIONS Millimeters Inches Min. Typ. Max. A 9.45 9.50 9.80 0.372 0.374 0.386 B 26 ∅C 4.90 5.00 5.10 0.193 0.197 0.201 ∅D 0.94 1.00 1.06 0.037 0.039 0.042 L1 Min. Typ. Max. 1.024 1.27 0.050 Note : The lead is not controlled within zone L1 Packaging : Standardpackagingis in tape and reel. Weight = 0.85 g. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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