STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A 3 1 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 3 1 1 D2PAK DPAK 2 TO-220FP Application ■ Switching applications Description Figure 1. Internal schematic diagram FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. $ ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB12NM50ND 12NM50ND D2PAK Tape and reel STD12NM50ND 12NM50ND DPAK Tape and reel STF12NM50ND 12NM50ND TO-220FP Tube June 2009 Doc ID 14936 Rev 2 1/16 www.st.com 16 Contents STB12NM50ND, STD12NM50ND, STF12NM50ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 14936 Rev 2 STB12NM50ND, STD12NM50ND, STF12NM50ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK DPAK TO-220FP VDS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage ± 25 V ID ID IDM (2) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 11 11 (1) A 6.9 6.9 (1) A 44 (1) A Drain current (pulsed) 44 PTOT Total dissipation at TC = 25 °C 100 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt (3) Tstg Tj Peak diode recovery voltage slope Storage temperature 25 W 2500 V 40 V/ns -55 to 150 °C 150 °C Operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 11 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max DPAK TO-220FP 1.25 30 5 50 °C/W Rthj-amb Thermal resistance junction-amb max Tl Table 4. Symbol Maximum lead temperature for soldering purposes °C/W 62.5 300 °C/W °C Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Doc ID 14936 Rev 2 Max value Unit 5 A 350 mJ 3/16 Electrical characteristics 2 STB12NM50ND, STD12NM50ND, STF12NM50ND Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 Drain-source voltage slope VDD = 400 V,ID = 11 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,@125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A 0.29 0.38 Ω Min. Typ. Max. Unit V(BR)DSS dv/dt(1) 500 V 44 3 V/ns 1. Value measured at turn off under inductive load Table 6. Symbol Parameter Test conditions gfs(1) Forward transconductance VDS =15 V, ID= 5.5 A - 8 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f =1 MHz, VGS = 0 - 850 48 5 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 400 V - 100 - pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 4.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 11 A VGS = 10 V Figure 19 - 30 6 17 - nC nC nC Coss eq.(2) 1. Dynamic Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 Doc ID 14936 Rev 2 STB12NM50ND, STD12NM50ND, STF12NM50ND Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Parameter VSD(2) Forward on voltage trr Qrr IRRM Min. Typ. - 12 15 40 17 Max. Unit - ns ns ns ns Source drain diode Source-drain current Source-drain current (pulsed) IRRM Test conditions VDD = 250 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V Figure 18 ISD ISDM (1) trr Qrr Electrical characteristics Test conditions Min. Typ. Max. Unit - 11 44 A A ISD = 11 A, VGS=0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt =100 A/µs, VDD = 100 V Figure 20 - 122 650 11 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 11 A Tj = 150 °C, Figure 20 - 160 940 12 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 14936 Rev 2 5/16 Electrical characteristics STB12NM50ND, STD12NM50ND, STF12NM50ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for DPAK AM03984v1 ID (A) 10µs DS (o Op Lim era ite tion d by in th m is ax ar R e n) a is 100 10 100µs 1ms Tj=150°C Tc=25°C 1 0.1 0.1 Figure 4. Sinlge pulse 10 1 100 1 VDS(V) Safe operating area for TO-220FP AM03986v1 ID (A) 10 10ms is ea ) ar S(on is th RD x in n ma o ti y ra d b e e p O mit Li 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 0.01 0.1 Figure 6. Sinlge pulse 10 1 100 VDS(V) Safe operating area for DPAK AM03985v1 ID (A) 100 on a DS ( Op Lim era ite tion d by in th m is ax ar R e ) is 10µs 10 100µs 1ms Tj=150°C Tc=25°C 1 0.1 0.1 6/16 10ms Sinlge pulse 1 10 100 VDS(V) Doc ID 14936 Rev 2 STB12NM50ND, STD12NM50ND, STF12NM50ND Figure 8. Output characteristics Electrical characteristics Figure 9. AM03987v1 ID (A) Transfer characteristics AM03988v1 ID (A) VGS=10V 20 20 VDS=20V 15 15 7V 10 10 6V 5 0 0 5 5V 5 10 20 15 25 25 Figure 10. Transconductance 2 4 6 8 10 VGS(V) Figure 11. Static drain-source on resistance AM03989v1 GFS (S) 0 0 VDS(V) TJ=-50°C AM03990v1 RDS(on) (Ω) 0.35 8.5 TJ=25°C 0.33 6.5 TJ=150°C 0.31 4.5 0.29 2.5 0.27 0.5 0 10 5 20 15 ID(A) 25 0.25 0 4 2 6 8 10 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM03991v1 VGS (V) VDS VGS 10 VDD=400V 400 ID=11A 350 AM03992v1 C (pF) 1000 Ciss 300 8 250 6 200 4 100 Coss 150 100 10 Crss 2 50 0 0 5 10 15 20 25 30 0 Qg(nC) Doc ID 14936 Rev 2 1 0.1 1 10 100 VDS(V) 7/16 Electrical characteristics STB12NM50ND, STD12NM50ND, STF12NM50ND Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature AM03993v1 VGS(th) (norm) 1.10 AM03394v1 RDS(on) (norm) 2.0 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward characteristics 0 25 50 75 100 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM03996v1 VSD (V) 0.5 -50 -25 1.2 BVDSS (norm) 1.07 1.0 1.05 TJ=-50°C AM03995v1 1.03 0.8 TJ=150°C 1.01 0.6 0.99 TJ=25°C 0.4 0.97 0.2 0.95 0 0 8/16 10 20 30 40 50 ISD(A) 0.93 -50 -25 Doc ID 14936 Rev 2 0 25 50 75 100 TJ(°C) STB12NM50ND, STD12NM50ND, STF12NM50ND 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 14936 Rev 2 10% AM01473v1 9/16 Package mechanical data 4 STB12NM50ND, STD12NM50ND, STF12NM50ND Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 14936 Rev 2 STB12NM50ND, STD12NM50ND, STF12NM50ND Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 14936 Rev 2 11/16 Package mechanical data STB12NM50ND, STD12NM50ND, STF12NM50ND D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 12/16 Min Doc ID 14936 Rev 2 8° STB12NM50ND, STD12NM50ND, STF12NM50ND 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type Doc ID 14936 Rev 2 13/16 Packaging mechanical data STB12NM50ND, STD12NM50ND, STF12NM50ND DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 R 40 W 15.7 0.075 0.082 1.574 16.3 0.618 0.641 Doc ID 14936 Rev 2 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STB12NM50ND, STD12NM50ND, STF12NM50ND 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 23-Sep-2008 1 First release 10-Jun-2009 2 Added new package, mechanical data: TO-220FP Doc ID 14936 Rev 2 15/16 STB12NM50ND, STD12NM50ND, STF12NM50ND Please Read Carefully: Information in this document is provided solely in connection with ST products. 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