STMICROELECTRONICS STI12NM50N

STB12NM50N,STD12NM50N,STI12NM50N
STF12NM50N, STP12NM50N
N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET
TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
3
STB12NM50N
550 V
0.38 Ω
11 A
STD12NM50N
550 V
0.38 Ω
11 A
STI12NM50N
550 V
0.38 Ω
11 A
STF12NM50N
550 V
0.38 Ω
11 A (1)
STP12NM50N
550 V
0.38 Ω
11 A
1
3
12
2
I²PAK
TO-220
3
1
DPAK
3
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Application
■
3
1
■
1
D²PAK
Figure 1.
2
TO-220FP
Internal schematic diagram
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB12NM50N
B12NM50N
D²PAK
Tape and reel
STD12NM50N
D12NM50N
DPAK
Tape and reel
STI12NM50N
I12NM50N
I²PAK
Tube
STF12NM50N
F12NM50N
TO-220FP
Tube
STP12NM50N
P12NM50N
TO-220
Tube
July 2008
Rev 8
1/19
www.st.com
19
Contents
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/19
................................................ 9
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220 / I²PAK
TO-220FP
D²PAK / DPAK
Unit
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
11
11(1)
A
ID
Drain current (continuous) at TC=100 °C
6.7
6.7(1)
A
Drain current (pulsed)
44
44 (1)
A
Total dissipation at TC = 25 °C
100
25
W
IDM
(2)
PTOT
dv/dt(3)
Peak diode recovery voltage slope
15
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
Tstg
Storage temperature
TJ
V/ns
--
2500
V
-55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11A, di/dt ≤ 400A/µs, VDD =80%V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220 I²PAK DPAK D²PAK TO-220FP
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junction-amb
max
Rthj-pcb
Thermal resistance junction-pcb
max
Tl
Table 4.
Symbol
1.25
62.5
--
Maximum lead temperature for
soldering purposes
--
5
°C/W
--
--
62.5
°C/W
50
30
--
°C/W
300
°C
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Ias, Vdd=50V)
Value
Unit
5
A
350
mJ
3/19
Electrical characteristics
2
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
dv/dt(1)
On/off states
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 1 mA, VGS= 0
Min
Typ.
Max
500
Peak diode recovery voltage VDD=400 V, ID=11 A,
slope
VGS=10 V
Unit
V
44
VDS = max rating,
V/ns
VDS = max rating@125 °C
1
100
µA
µA
Gate body leakage current
(VDS = 0)
VGS = ±20 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
0.29
0.38
Ω
Typ.
Max
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
2
1. Characteristic value at turn off inductive load
Table 6.
Symbol
gfs (1)
Ciss
Coss
Crss
Dynamic
Parameter
Qg
Min
Forward transconductance
VDS =15 V, ID = 5.5 A
8
S
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =50 V, f=1 MHz,
VGS=0
940
100
10
pF
pF
pF
VGS=0, VDS =0 to 400 V
130
pF
VDD=400 V, ID = 11 A
30
6
15
nC
nC
nC
4.5
Ω
Coss eq(2) Equivalent output
capacitance
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
Rg
Gate input resistance
Qgs
Test conditions
VGS =10 V
(see Figure 17)
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Symbol
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Electrical characteristics
Min
Typ.
Max
15
15
60
14
VDD=250 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
Unit
ns
ns
ns
ns
Source drain diode
Max
Unit
Source-drain current
11
A
ISDM(1)
Source-drain current (pulsed)
44
A
VSD(2)
Forward on voltage
ISD=11 A, VGS=0
1.3
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
di/dt = 100 A/µs,
(see Figure 18)
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
ISD=11 A, VDD=100 V
ISD=11 A,
di/dt = 100 A/µs,
VDD=100 V, Tj=150 °C
(see Figure 18)
Min
Typ.
340
3.5
20
ns
µC
A
420
4
20
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
5/19
Electrical characteristics
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220/
DPAK/ D²PAK / I²PAK
Figure 3.
Thermal impedance for TO-220/
DPAK/ D²PAK / I²PAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
6/19
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Figure 8.
Transconductance
Figure 9.
Electrical characteristics
Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
7/19
Electrical characteristics
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Figure 14. Source-drain diode forward
characteristics
8/19
Figure 15. Normalized BVDSS vs temperature
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
3
Test circuit
Test circuit
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
Figure 19. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
9/19
Package mechanical data
4
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/19
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/19
Package mechanical data
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
TO-220FP mechanical data
mm.
Dim.
Min.
A
4.40
inch
Typ
Max.
Min.
4.60
0.173
Typ.
0.181
Max.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.017
0.027
F
0.75
1.00
0.030
0.039
F1
1.15
1.50
0.045
0.067
F2
1.15
1.50
0.045
0.067
G
4.95
5.20
0.195
0.204
G1
2.40
2.70
0.094
0.106
H
10
10.40
0.393
L2
16
0.409
0.630
28.6
30.6
1.126
L4
9.80
10.60
0.385
1.204
0.417
L5
2.9
3.6
0.114
0.141
L6
15.90
16.40
0.626
0.645
L7
9
9.30
0.354
0.366
Dia
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
Dia
F
F1
L7
L2
L5
1 2 3
L4
7012510-I
12/19
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Package mechanical data
I²PAK (TO-262) mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
Typ
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
Max
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
13/19
Package mechanical data
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Typ
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
0079457_M
14/19
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
15/19
Packaging mechanical data
5
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
16/19
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
17/19
Revision history
6
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Revision history
Table 9.
18/19
Document revision history
Date
Revision
Changes
24-May-2005
1
Initial release
10-Jun-2005
2
Inserted new row in Table 7.: Switching times
28-Sep-2005
3
Document status promoted from preliminary data to datasheet.
14-Oct-2005
4
Modified Figure 6, Figure 9
06-Mar-2006
5
Modified Figure 8
29-Mar-2006
6
Modified value on Table 5.
14-Nov-2006
7
Document reformatted no content change
24-Jul-2008
8
– Added I²PAK;
– Table 3: Thermal data has been updated;
– Figure 11: Capacitance variations changed.
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
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19/19