STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mΩ, 160 A, D2PAK, I2PAK STripFET™ III Power MOSFET Features RDS(on) max ID Type VDSS STB270N4F3 40 V < 2.0 mΩ 160 A 330 W STI270N4F3 40 V < 2.6 mΩ 120 A 330 W ■ ■ PTOT 100% avalanche tested 3 3 12 1 Standard threshold drive D²PAK I²PAK Applications ■ High current, switching application – Automotive Description Figure 1. Internal schematic diagram This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. Device summary Order codes Marking Package Packaging STB270N4F3 270N4F3 D²PAK Tape and reel STI270N4F3 270N4F3 I²PAK Tube July 2009 Doc ID 13208 Rev 4 1/14 www.st.com 14 Contents STB270N4F3, STI270N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/14 ................................................ 8 Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit I²PAK D²PAK VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C 120 160 A ID(1) Drain current (continuous) at TC=100 °C 120 160 A Drain current (pulsed) 480 640 A IDM (2) PTOT 40 V ± 20 V Total dissipation at TC = 25 °C 330 W Derating factor 2.2 W/°C dv/dt(3) Peak diode recovery voltage slope 3.5 V/n EAS(4) Single pulse avalanche energy 1 J TJ Operating junction temperature Storage temperature -55 to 175 °C Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 120 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting Tj=25 °C, ID =80 A, VDD= 32 V Table 3. Thermal data Value Symbol Parameter Unit I²PAK Rthj-case Rthj-pcb (1) Thermal resistance junction-case max D²PAK 0.45 Thermal resistance junction-pcb max °C/W 35 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose (for 10 sec, 1.6 mm from case) 300 °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Doc ID 13208 Rev 4 3/14 Electrical characteristics 2 STB270N4F3, STI270N4F3 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Test conditions Drain-source breakdown voltage Min. ID = 250 µA, VGS= 0 Typ. Max. Unit 40 V VDS = Max rating, 10 µA @125 °C 100 µA Gate body leakage current (VDS = 0) VGS = ±20 V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 80 A IDSS IGSS Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Zero gate voltage drain current (VGS = 0) VDS = Max rating 2 I²PAK 2.1 2.6 mΩ D²PAK 1.6 2.0 mΩ Dynamic Parameter Test conditions Forward transconductance VDS =15 V, ID = 80 A Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Total gate charge Gate-source charge gate-drain charge VGS =10 V Min. Typ. Max. Unit - 200 S - 7400 1800 47 pF pF pF - 110 27 25 VDD=20 V, ID = 160 A (see Figure 14) 150 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf 4/14 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. VDD=20 V, ID= 80 A, RG=4.7 Ω, VGS=10 V - 22 180 - ns ns - 110 45 - ns ns (see Figure 16) VDD=20 V, ID= 80 A, RG=4.7 Ω, VGS=10 V (see Figure 16) Doc ID 13208 Rev 4 Typ. Max. Unit STB270N4F3, STI270N4F3 Table 7. Symbol Electrical characteristics Source drain diode Parameter Test conditions ISD Source-drain current ISDM(1) Source-drain current (pulsed) VSD(2) Forward on voltage trr Qrr IRRM Min Typ. Max Unit D²PAK - 160 A I²PAK - 120 A D²PAK - 640 A I²PAK - 480 A - 1.5 V ISD=80 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=160 A, di/dt = 100 A/µs, VDD=32 V, Tj=150 °C (see Figure 15) - 70 225 3.2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Doc ID 13208 Rev 4 5/14 Electrical characteristics STB270N4F3, STI270N4F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature HV29690 RDS(on) (mΩ) I²PAK 2.10 2.00 1.90 VGS=10V 1.80 1.70 D²PAK 1.60 1.50 1.40 1.30 0 6/14 20 40 60 80 100 120 140 ID(A) Doc ID 13208 Rev 4 STB270N4F3, STI270N4F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics AM04229v1 VSD (V) 0.95 0.90 0.85 0.80 TJ=-50°C TJ=25°C 0.75 0.70 0.65 TJ=175°C 0.60 0.55 0.50 0.45 0.40 0 20 40 60 80 100 120 140 160 180 ISD(A) Doc ID 13208 Rev 4 7/14 Test circuit 3 STB270N4F3, STI270N4F3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 13208 Rev 4 10% AM01473v1 STB270N4F3, STI270N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13208 Rev 4 9/14 Package mechanical data STB270N4F3, STI270N4F3 I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 10/14 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 13208 Rev 4 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STB270N4F3, STI270N4F3 Package mechanical data D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M Doc ID 13208 Rev 4 11/14 Packaging mechanical data 5 STB270N4F3, STI270N4F3 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 12/14 Doc ID 13208 Rev 4 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB270N4F3, STI270N4F3 6 Revision history Revision history Table 8. Revision history Date Revision Changes 07-Feb-2007 1 Initial release. 02-Apr-2008 2 Some value changes onTable 2 06-May-2009 3 Changed: Description and Figure 12: Source-drain diode forward characteristics 14-Jul-2009 4 Removed package and mechanical data: TO-220 Doc ID 13208 Rev 4 13/14 STB270N4F3, STI270N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 13208 Rev 4