STPS40L40CT/CW ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE CAPABILITY SPECIFIED A1 K A2 A2 K A1 TO-247 STPS40L40CW TO-220AB STPS40L40CT DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) RMS forward current 30 A 20 40 A 230 A IF(AV) Average forward current Tc = 130°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz 2 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A PARM Repetitive peak avalanche power tp = 1µs 8100 W - 65 to + 150 °C 150 °C 10000 V/µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 7A 1/5 STPS40L40CT/CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter Value 1.5 0.8 0.1 Per diode Total Coupling Junction to case Rth(c) Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Tests Conditions Reverse leakage current Tj = 25°C Min. Typ. VR = VRRM Forward voltage drop Unit mA 70 mA 0.53 V 30 Tj = 100°C VF * Max. 0.8 Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A 0.42 0.49 0.69 0.6 0.7 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0105 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 16 δ = 0.1 14 δ = 0.2 δ = 0.5 δ = 0.05 12 10 δ=1 8 6 T 4 2 IF(av) (A) 0 0 2 4 6 8 δ=tp/T tp 10 12 14 16 18 20 22 24 Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 2: Average current versus temperature (δ = 0.5, per diode). 22 20 18 16 14 12 10 8 6 4 2 0 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 ambient 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/5 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS40L40CT/CW Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 250 225 200 175 150 125 100 75 IM 50 25 0 1E-3 Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=25°C Tc=75°C δ = 0.5 0.4 δ = 0.2 T δ = 0.1 Tc=125°C 0.2 Single pulse t tp(s) t(s) δ=0.5 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-4 1E-3 δ=tp/T 1E-2 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). 5.0 F=1MHz Tj=25°C Tj=150°C 1E+2 tp C(nF) IR(mA) 5E+2 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. Tj=125°C 1E+1 1.0 Tj=75°C 1E+0 1E-1 Tj=25°C VR(V) 1E-2 0 5 10 15 20 25 VR(V) 30 35 40 0.1 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 200 100 Typical values Tj=150°C 10 Tj=125°C Tj=75°C Tj=25°C 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3/5 STPS40L40CT/CW PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. Min. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G n n n COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55M.N MAXIMUM TORQUE VALUE : 0.70 M.N 4/5 Millimeters A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 STPS40L40CT/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Inches Min. Typ. Max. Min. Typ. Max. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = n n n = 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.8M.N MAXIMUM TORQUE VALUE : 1.0M.N Ordering type n E A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Marking Package Weight Base qty Delivery mode STPS40L40CT STPS40L40CT TO-220AB 2g 50 Tube STPS40L40CW STPS40L40CW TO-247 4.4g 30 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5