STMICROELECTRONICS STTH20003TV

STTH20003TV
Ultrafast high voltage rectifier
Mian product characteristics
IF(AV)
up to 2 x 100 A
VRRM
300 V
A1
K1
Tj (max)
150° C
A2
K2
VF (typ)
0.95 V
trr (max)
90 ns
K1
A1
Features and benefits
K2
■
Combines highest recovery and reverse
voltage performance
■
Ultrafast, soft and noise-free recovery
■
Package insulation voltage 2500 Vrms
■
low inductance and low capacitance allow
simpler layout
A2
ISOTOP
STTH20003TV
Description
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Order codes
Packaged in ISOTOP™, this device is intended
for use in low voltage, high frequency inverters,
free wheeling operation, welding equipment and
telecom power supplies.
Table 1.
Part number
Marking
STTH20003TV
STTH20003TV
Absolute ratings (limiting values, per diode, Tc = 25° C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS)
RMS forward current
180
A
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Tc = 85° C δ = 0.5
tp = 10 ms sinusoidal
Maximum operating junction temperature
Per diode
100
Per device
200
A
100
A
-55 to + 150
°C
150
°C
TM: ISOTOP is a registered trademark of STMicroelectronics
September 2006
Rev 2
1/7
www.st.com
7
Characteristics
1
STTH20003TV
Characteristics
Table 2.
Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value (max).
Per diode
0.55
Total
0.35
Unit
°C/W
0.1
When diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 3.
Symbol
Static electrical characteristics (per diode)
Parameter
IR(1)
Reverse leakage
current
VF(2)
Forward voltage drop
Test conditions
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 150° C
Min.
VR = 300 V
Typ
0.2
Max.
Unit
200
µA
2
mA
1.20
IF = 100 A
V
0.8
0.95
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.0020 IF2(RMS)
Table 4.
Symbol
Parameter
trr
Reverse recovery
time
Tj = 25° C
Test conditions
IRM
Reverse recovery
current
IF = 0.5 A Irr = 0.25 A IR = 1 A
Min Typ Max Unit
55
ns
IF = 1 A dIF/dt = -50 A/µs
VR = 30 V
90
Tj = 125° C
VR = 200 V
IF = 100 A
dIF/dt = -200 A/µs
18
A
Softness factor
Tj = 125° C
IF = 100 A
VR = 200 V
dIF/dt = -200 A/µs
tfr
Forward recovery
time
Tj = 25° C
dIF/dt = 200 A/µs
IF = 100 A
VFR = 1.1 x VFmax
1400
ns
VFP
Forward recovery
voltage
Tj = 25° C
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
5
V
Sfactor
2/7
Dynamic characteristics (per diode)
0.3
STTH20003TV
Figure 1.
Characteristics
Conduction losses versus
Figure 2.
average forward current (per diode)
P1(W)
120
δ = 0.2
Tj=125°C
(Typical values)
δ = 0.1
100
δ=1
100
δ = 0.05
80
IFM(A)
500
δ = 0.5
Forward voltage drop versus
forward current (per diode)
Tj=25°C
60
Tj=125°C
10
40
T
20
IF(av) (A)
0
0
20
Figure 3.
1.0
40
60
δ=tp/T
80
tp
100
1
0.0
120
VFM(V)
0.2
0.4
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
0.8
1.0
1.4
1.6
1.8
2.0
Peak reverse recovery current
versus dIF/dt (90% confidence, per
diode)
VR=200V
Tj=125°C
35
IF=2xIF(av)
30
IF=IF(av)
25
0.6
1.2
IRM(A)
40
0.8
0.6
IF=0.5xIF(av)
20
0.4
15
T
10
0.2
Single pulse
0.0
1E-3
1E-2
Figure 5.
260
240
220
200
180
160
140
120
100
80
60
40
20
0
tp(s)
1E-1
δ=tp/T
tp
1E+0
5E+0
Reverse recovery time versus
dIF/dt (90% confidence, per diode)
trr(ns)
5
0
dIF/dt(A/µs)
0
100 150 200 250 300 350 400 450 500
Figure 6.
0.6
VR=200V
Tj=125°C
50
Softness factor (tb/ta) versus
dIF/dt (typical values, per diode)
S factor
VR=200V
Tj=125°C
0.5
IF=2xIF(av)
0.4
IF=IF(av)
IF=0.5xIF(av)
0.3
0.2
0.1
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
0.0
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
3/7
Characteristics
Figure 7.
Relative variations of dynamic
Figure 8.
parameters versus junction
temperature (reference: Tj = 125° C)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
8
4/7
Transient peak forward voltage
versus dIF/dt (90% confidence, per
diode)
VFP(V)
IF=IF(av)
Tj=125°C
7
S factor
6
5
4
3
IRM
2
1
Tj(°C)
50
75
100
125
Forward recovery time versus dIF/dt
(90% confidence, per diode)
Figure 9.
1000
900
800
700
600
500
400
300
200
100
0
STTH20003TV
tfr(ns)
VFR=1.1 x VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
0
50 100 150 200 250 300 350 400 450 500
0
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
STTH20003TV
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 1.3 Nm
●
Maximum torque value: 1.5 Nm
Table 5.
ISOTOP Dimensions
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E
G2
A
C
A1
C2
E2
F1
F
P1
D
G
S
D1
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
B
ØP
G1
E1
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
4
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STTH20003TV
Ordering information
Ordering type
Marking
Package
STTH20003TV
STTH20003TV
ISOTOP
Weight
Base qty
27 g
10
(without screws) (with screws)
Delivery mode
Tube
Revision history
Date
Revision
1999
2C
5-Sep-2006
2
Description of Changes
First issue
Reformatted to current standards. Thermal resistance updated
in Table 2.
STTH20003TV
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