STW24NK55Z N-channel 550 V - 0.18 Ω - 23 A - TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID Pw STW24NK55Z 550 V <0.22 Ω 23 A 285 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability 2 3 1 TO-247 Application ■ Switching applications Description Figure 1. Internal schematic diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Table 1. Device summary Order code Marking Package Packaging STW24NK55Z 24NK55Z TO-247 Tube January 2008 Rev 1 1/12 www.st.com 12 Contents STW24NK55Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STW24NK55Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 550 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 23 A ID Drain current (continuous) at TC=100 °C 10.35 A IDM(1) Drain current (pulsed) 92 A PTOT Total dissipation at TC = 25 °C 285 W Derating factor 2.27 W/°C Peak diode recovery voltage slope 4.5 V/ns -55 to 150°C °C 150 °C Value Unit 0.44 °C/W Thermal resistance junction-ambient max 50 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit dv/dt(2) Tstg TJ Storage temperature Max. perating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 23 A, di/dt ≤ 200 A/µs,VDD= 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-a Tl Table 4. Symbol Thermal data Parameter Thermal resistance junction-case max Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 23 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) 400 mJ 3/12 Electrical characteristics 2 STW24NK55Z Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS= 0 Min. Typ. Max. Unit 550 V VDS = Max rating, VDS = Max rating @125 °C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 11.5 A 0.18 0.22 Ω Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 6. Symbol gfs (1) Ciss Coss Crss 3 Dynamic Parameter Test conditions Forward transconductance VDS =15 V, ID = 11.5 A Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 Coss eq(2). Equivalent output capacitance Min. 20 S 4397.5 480.5 116 pF pF pF VGS=0, VDS =0 to 480 V 250 pF RG Intrinsic gate resistance f=1 MHz, open drain 2.3 Ω Qg Total gate charge Gate-source charge Gate-drain charge VDD= 440 V, ID = 23 A 130 25 76 nC nC nC 30 35 136 88 ns ns ns ns Qgs Qgd td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VGS =10 V (see Figure 15) VDD= 275 V, ID=11.5 A, RG= 4.7 Ω, VGS=10 V (see Figure 14) 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 STW24NK55Z Electrical characteristics Table 7. Symbol Source drain diode Max Unit Source-drain current 23 A ISDM(1) Source-drain current (pulsed) 92 A VSD(2) Forward on voltage ISD= 23 A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 23 A, VDD= 50 V ISD trr Qrr IRRM trr Qrr IRRM Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min di/dt = 100 A/µs, (see Figure 18) ISD= 23 A, di/dt = 100 A/µs, VDD= 50 V, Tj=150 °C (see Figure 18) Typ. 508 7.4 29 ns µC A 608 9.7 31.8 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter BVGSO(1) Gate-source breakdown voltage Test conditions Igs=±1 mA (open drain) Min. Typ. Max. Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/12 Electrical characteristics STW24NK55Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics HV41790 ID(A) HV41795 ID(A) 70 70 VGS =10V VDS = 20V 60 60 7V 50 50 40 40 30 30 6V 20 20 10 10 5V 0 0 Figure 6. 5 10 15 20 25 30 VDS(V) Normalized BVDSS vs temperature 0 0 Figure 7. 2 4 6 8 10 VGS(V) Static drain-source on resistance HV41880 RDS(on) (Ω) 0.18 0.15 0.14 0.12 6/12 5 10 15 20 ID(A) STW24NK55Z Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations HV41800 VGS (V) 12 VDD=440V ID=23A VGS=10V 10 8 6 4 2 0 0 50 100 150 Qg (nC) Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Maximum avalanche energy vs temperature Figure 13. Source-drain diode forward characteristics HV41780 450 EAS (mJ) HV41850 VSD 1.199997 (V) 400 1.0 0.999997 350 Tj = -50˚C 0.8 0.799998 300 250 25˚C 0.6 0.599998 200 150˚C 0.4 0.399999 150 100 0.2 0.199999 50 0 0 30 60 90 120 150 0 0.000000 TJ (˚C) 0 5 10 15 20 ID(A) 7/12 Test circuits 3 STW24NK55Z Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform STW24NK55Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STW24NK55Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 10/12 TYP 5.50 0.216 STW24NK55Z 5 Revision history Revision history Table 9. Document revision history Date Revision 04-Jan-2008 1 Changes First release 11/12 STW24NK55Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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