STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features Type VDSS @ TJmax RDS(on) max ID PW STB30NM60N 650 V <0.13Ω 25A 190 W STI30NM60N 650 V <0.13Ω 25A 190 W STF30NM60N 650 V <0.13Ω 25A(1) 40 W STP30NM60N 650 V <0.13Ω 25A 190 W STW30NM60N 650 V <0.13Ω 25A 190 W 3 3 12 1 D²PAK I²PAK 2 1 TO-247 1. Limited only by maximum temperature allowed 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Figure 1. ■ 1 2 TO-220FP TO-220 Application 3 3 2 1 ■ 3 Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60N 30NM60N D²PAK Tape and reel STI30NM60N 30NM60N I²PAK Tube STF30NM60N 30NM60N TO-220FP Tube STP30NM60N 30NM60N TO-220 Tube STW30NM60N 30NM60N TO-247 Tube July 2008 Rev 2 1/18 www.st.com 18 Contents STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 I²PA K Unit TO-247 D²PAK TO-220FP VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 25 25 (1) A ID Drain current (continuous) at TC = 100 °C 15.8 15.8(1) A IDM (2) Drain current (pulsed) 100 100 (1) A PTOT Total dissipation at TC = 25 °C 190 40 W dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 15 V/ns -- 2500 V -55 to 150 °C 150 °C TO-220 I²PAK TO-247 D²PAK TO-220FP Unit Max. operating juncion temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 25A, di/dt ≤ 400A/µs, VDD =80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junction-amb max Tl Table 4. 0.66 -- -62.5 Maximum lead temperature for soldering purposes 3.1 °C/W -- 30 -- °C/W 50 -- 62.5 °C/W 300 °C Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 12 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 900 mJ 3/18 Electrical characteristics 2 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics (Tcase =25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Typ. Max. 600 Unit V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125°C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.1 0.13 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 12.5 A Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent Output capacitance Rg Qg Qgs Qgd Coss eq. VDS = 15 V, ID = 12.5 A Min. 25 S 2700 210 22 pF pF pF VGS = 0, VDS = 0 to 480 V 66 pF Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain 3 Ω Total gate charge Gate-source charge Gate-drain charge VDD =480 V, ID = 25 A, VGS = 10 V (see Figure 19) 91 14 50 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 4/18 Min. STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol Turn-on delay time Rise time Turn-off-delay time Fall time Electrical characteristics Test conditions Min. Typ. Max Unit 20 24 125 70 VDD = 300 V, ID = 12.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 25 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, di/dt = 100 A/µs VDD= 100 V (see Figure 23) 540 10 36 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, di/dt = 100 A/µs VDD= 100 V Tj = 150°C (see Figure 23) 630 12 36 ns µC A trr Qrr IRRM trr Qrr IRRM 25 100 A A 1.3 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Figure 8. Output characteristics Figure 9. AM00051v1 ID(A) Electrical characteristics Transfer characteristics AM00052v1 ID(A) VGS=10V 30 5 25 4 5V 20 3 15 2 10 1 5 4V 0 0 0 5 10 15 20 25 30 VSD(V) Figure 10. Transconductance 0 2 4 6 8 VGS(V) Figure 11. Static drain-source on resistance AM00048v1 Gfs(S) AM00046v1 RDS(on) (Ω) 30.5 0.135 TJ=-50°C 25°C 25.5 0.115 150°C 20.5 0.095 15.5 0.075 VGS=10V ID=12.5A 10.5 0.055 5.5 0.035 0.5 0.015 0 5 10 15 20 25 30 ID(A) 0 5 10 15 20 25 ID(A)30 Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM00044v1 AM00045v1 VGS(V) C(pF) VDD=480V ID=25A 12 10000 Ciss 10 1000 8 6 Coss 100 4 Crss 10 2 0 0 20 40 60 80 100 Qg(nC) 1 0.1 1 10 100 VGS(V) 7/18 Electrical characteristics STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Figure 14. Normalized gate threshold voltage vs temperature AM00043v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM00047v1 RDS(on) (norm) 2.1 1.1 ID=250µA 1.05 1.9 1 1.7 0.95 1.5 0.9 1.3 0.85 1.1 0.8 0.9 0.75 0.7 0.7 0.5 -50 -25 0 25 50 75 100 125 T150 J(°C) Figure 16. Source-drain diode forward characteristics VSD(V) 1 -50 -25 0 25 50 75 100 125 T150 J(°C) Figure 17. Normalized BVDSS vs temperature AM00050v1 AM00049v1 BVDSS (norm) 25°C TJ=-50°C 1.07 1.05 150°C 0.8 1.03 0.6 1.01 0.99 0.4 0.97 0.2 0.95 0 0 8/18 10 20 0.93 ISD(A) -50 -25 0 25 50 75 100 125 T150 J(°C) STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/18 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Typ Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 3.65 5.50 5.50 13/18 Package mechanical data STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/18 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/18 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 23-Oct-2007 1 First release. 09-Jul-2008 2 Document status promoted: from preliminary data to datasheet. 17/18 STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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