STW55NM50N N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V <0.054 Ω 54 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1 TO-247 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STW55NM50N 55NM50N TO-247 Tube July 2008 Rev 2 1/12 www.st.com 12 Contents STW55NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STW55NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 54 A ID Drain current (continuous) at TC = 100 °C 35 A Drain current (pulsed) 216 A Total dissipation at TC = 25 °C 350 W Peak diode recovery voltage slope 15 V/ns –55 to 150 °C 150 °C Value Unit 0.36 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 54 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 15 A 1600 mJ Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAS, VDD=50 V) 3/12 Electrical characteristics 2 STW55NM50N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD=400 V, ID = 54 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 27 A 500 V 30 2 3 V/ns Ω 0.040 0.054 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS=15 V, ID = 27 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 5800 370 30 Equivalent output capacitance VGS = 0V, VDS = 0V to 400V 750 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 54 A, VGS = 10 V (see Figure 15) 180 23 90 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain 2 Ω Coss eq. (2) 42 S pF pF pF 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 STW55NM50N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit 40 40 250 70 VDD =250 V, ID = 27 A RG = 4.7 Ω VGS = 10 V (see Figure 14) ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Max Unit 54 216 A A 1.5 V Forward on voltage ISD = 54 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 54 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) 630 13 40 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 54 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) 750 16 42 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STW55NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 STW55NM50N Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature Figure 13. Source-drain diode forward characteristics 7/12 Test circuits 3 STW55NM50N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform STW55NM50N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STW55NM50N TO-247 mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max . 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Typ 5.50 STW55NM50N 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 22-Apr-2008 1 First release 29-Jul-2008 2 EAS value has been updated in Table 4 11/12 STW55NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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