TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power (d = 0.5%) at 14V/4Ω; at ± 14V the guaranteed output power is 12W on a 4Ω load and 8W on a 8Ω (DIN45500). The TDA2030 provides high output current and has very low harmonic and cross-over distortion. Further the device incorporates an original (and patented) short circuit protection system comprising an arrangement for automatically limiting the dissipated power so as to keep the working point of the output transistors within their safe operating area. A conventional thermal shut-down system is also included. Pentawatt ORDERING NUMBERS : TDA2030H TDA2030V ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit ± 18 V Vs Supply voltage Vi Input voltage Vi Differential input voltage ± 15 V Io Output peak current (internally limited) 3.5 A Power dissipation at Tcase = 90°C 20 W -40 to 150 °C Ptot Tstg, Tj Stoprage and junction temperature Vs TYPICAL APPLICATION March 1993 1/11 TDA2030 PIN CONNECTION (top view) +VS OUTPUT -VS INVERTING INPUT NON INVERTING INPUT TEST CIRCUIT 2/11 TDA2030 THERMAL DATA Symbol R th j-case Parameter Thermal resistance junction-case Value Unit 3 °C/W max ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Vs = ± 14V, T amb = 25°C unless otherwise specified) Symbol Parameter Vs Supply voltage Id Quiescent drain current Ib Input bias current Vos Input offset voltage Ios Input offset current Po Output power Test conditions B Distortion Power Bandwidth (-3 dB) Ri Input resistance (pin 1) Gv Voltage gain (open loop) Gv Voltage gain (closed loop) eN Input noise voltage iN Input noise current SVR Typ. Max. Unit ± 18 V 40 60 mA 0.2 2 µA ±2 ± 20 mV ± 20 ± 200 nA ±6 Vs = ± 18V d = 0.5% Gv = 30 dB f = 40 to 15,000 Hz RL = 4Ω RL = 8Ω d = 10% f = 1 KHz RL = 4Ω RL = 8Ω d Min. 12 8 14 9 W W 18 11 W W Gv = 30 dB Po = 0.1 to 12W RL = 4Ω Gv = 30 dB f = 40 to 15,000 Hz 0.2 0.5 % Po = 0.1 to 8W RL = 8Ω Gv = 30 dB f = 40 to 15,000 Hz 0.1 0.5 % Gv = 30 dB Po = 12W R L = 4Ω 0.5 f = 1 kHz 29.5 B = 22 Hz to 22 KHz Supply voltage rejection RL = 4Ω Gv = 30 dB Rg = 22 kΩ Vripple = 0.5 Veff fripple = 100 Hz Id Drain current Po = 14W Po = W Tj Thermal shut-down junction temperature R L = 4Ω R L = 8Ω 40 10 to 140,000 Hz 5 MΩ 90 dB 30 30.5 dB 3 10 µV 80 200 pA 50 dB 900 500 mA mA 145 °C 3/11 TDA2030 Figure 1. Output power vs. supply voltage Figure 2. Output power vs. supply voltage F ig u re 3 . Di stor ti on v s. output power Fi gur e 4. Di stortion v s. output power F ig ure 5. Di stortion vs. output power F ig u re 6 . Di stor ti on v s. frequency F igu r e 7. Di stor ti on vs . frequency 4/11 Fig ure 8. Fre que nc y re sponse with different values of the rolloff capacitor C8 (see fig. 13) Figure 9. Quiescent current vs. supply voltage TDA2030 Figure 10. Supply voltage rejection vs. voltage gain Figure 11. Power dissipation and efficiency vs. output power Figure 12. Maximum power dissipation vs. supply voltage (sine wave operation) APPLICATION INFORMATION Figure 13. Typical amplifier with split power supply Figure 14. P.C. board and component layout for the circuit of fig. 13 (1 : 1 scale) 5/11 TDA2030 APPLICATION INFORMATION (continued) Figure 15. Typical amplifier with single power supply Figure 16. P.C. board and component layout for the circuit of fig. 15 (1 : 1 scale) Figure 17. Bridge amplifier configuration with split power supply (Po = 28W, Vs = ±14V) 6/11 TDA2030 PRACTICAL CONSIDERATIONS Printed circuit board The layout shown in Fig. 16 should be adopted by the designers. If different layouts are used, the ground points of input 1 and input 2 must be well decoupled from the ground return of the output in which a high current flows. Assembly suggestion No electrical isolation is needed between the packageand the heatsinkwith singlesupply voltage configuration. Application suggestions The recommended values of the components are those shown on application circuit of fig. 13. Different values can be used. The following table can help the designer. Component Recomm. value R1 22 kΩ Closed loop gain setting Increase of gain Decrease of gain (*) R2 680 Ω Closed loop gain setting Decrease of gain (*) Increase of gain R3 22 kΩ Non inverting input biasing Increase of input impedance Decrease of input impedance R4 1Ω Frequency stability Danger of osccilat. at high frequencies with induct. loads R5 ≅ 3 R2 Upper frequency cutoff Poor high frequencies attenuation C1 1 µF Input DC decoupling Increase of low frequencies cutoff C2 22 µF Inverting DC decoupling Increase of low frequencies cutoff C3, C4 0.1 µF Supply voltage bypass Danger of oscillation C5, C6 100 µF Supply voltage bypass Danger of oscillation C7 0.22 µF Frequency stability Danger of oscillation 1 2π B R1 Upper frequency cutoff C8 D1, D2 ≅ 1N4001 Purpose Larger than recommended value Smaller bandwidth Smaller than recommended value Danger of oscillation Larger bandwidth To protect the device against output voltage spikes (*) Closed loop gain must be higher than 24dB 7/11 TDA2030 SHORT CIRCUIT PROTECTION The TDA2030 has an original circuit which limits the current of the output transistors. Fig. 18 shows that the maximum output current is a function of the collector emitter voltage; hence the output transistors work within their safe operating area (Fig. 2). This function can therefore be considered as being F i gu r e 1 8. Ma ximum o u tpu t c urr en t v s . voltage [VCEsat ] across each output transistor peak power limiting rather than simple current limiting. It reduces the possibility that the device gets damaged during an accidental short circuit from AC output to ground. Figure 19. Safe operating area and collector characteristics of the protected power transistor THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1. An overload on the output (even if it is permanent), or an abovelimit ambient temperaturecan be easily supported since the Tj cannot be higher than 150°C. 2. The heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no possibility of device damage due to high junction temperature.If for any reason, the 8/11 junction temperature increases up to 150°C, the thermal shut-down simply reduces the power dissipation at the current consumption. The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its thermal resistance); fig. 22 shows this dissipable power as a function of ambient temperature for different thermal resistance. TDA2030 Figure 20. Output power and d ra i n cu r ren t vs. c ase temperature (RL = 4Ω) Figure 23. Example of heat-sink Figure 21. Output power and d r a i n c u rr en t vs. c as e temperature (RL = 8Ω) F i gu r e 2 2. Ma ximum allowable power dissipation vs. ambient temperature Dimension : suggestion. The following table shows the length that the heatsink in fig.23 must have for several values of Ptot and Rth. Ptot (W) Length of heatsink (mm) Rth of heatsink (° C/W) 12 8 6 60 40 30 4.2 6.2 8.3 9/11 TDA2030 PENTAWATT PACKAGE MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 G 3.4 G1 6.8 H2 H3 0.039 0.055 0.126 0.134 0.142 0.260 0.268 0.276 10.4 10.05 0.409 10.4 0.396 0.409 L 17.85 0.703 L1 15.75 0.620 L2 21.4 0.843 L3 22.5 0.886 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 M 0.260 4.5 M1 0.177 4 Dia 0.157 3.65 3.85 0.144 0.152 E L D1 C D M A M1 L1 L2 G L7 L6 F H2 F1 Dia. G1 L3 H3 L5 10/11 MAX. TDA2030 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 11/11