TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURES z High current gain bandwidth product fT=600MHz(Typ.), z High power gain GPE=22dB at f=100MHz 1.EMITTER 2 COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value Units 1 2 3 VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO IC Emitter-Base Voltage Collector Current 4 20 V mA PC Collector Power dissipation 250 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 4 V Collector cut-off current ICBO VCB= 30V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 μA DC current gain hFE VCE=6 V, IC= 1mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA Base-emitter voltage VBE(ON) VCE=6V, IC= 1mA 0.65 Transition frequency fT VCE=6 V, IC= 1mA 400 Cob Collector output capacitance VCE=6V,IE=0, f =1MHz 40 180 0.3 V 0.77 V MHz 1.3 CLASSIFICATION OF hFE Rank Range Y GR BL 40-80 60-120 90-180 pF