2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Rating Unit VCBO 120 V VCEX 100 VCEO 50 VEBO 9 DC IC 5 Pulse ICP 10 IB 0.5 Base current Ta = 25°C Collector power dissipation Symbol Tc = 25°C Junction temperature Storage temperature range V V A A 1 Pc W 20 JEDEC ― JEITA ― Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 0.36 g (typ.) 2-7J1A Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 120 V, IE = 0 ⎯ ⎯ 100 nA Emitter cutoff current IEBO VEB = 9 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO V IC = 10 mA, IB = 0 50 ⎯ ⎯ hFE (1) VCE = 2 V, IC = 0.5 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 1.6 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 32 mA ⎯ ⎯ 0.22 V Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 32 mA ⎯ ⎯ 1.10 V ⎯ 60 ⎯ ⎯ 500 ⎯ ⎯ 95 ⎯ Collector-emitter breakdown voltage DC current gain Rise time Switching time Storage time Fall time tr tstg tf See Figure 1. VCC ∼ − 24 V, RL = 15 Ω IB1 = 32 mA, IB2 = − 53 mA 1 ns 2005-02-28 2SC5886A VCC IB1 IB1 Input RL 20 µs Output IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Marking C5886A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-28 2SC5886A IC – VCE hFE – IC 6 40 30 20 10 4 Common emitter VCE = 2 V Pulse test hFE 50 DC current gain Collector current IC (A) 70 10000 Common emitter Tc = 25°C Pulse test 5 2 2 Tc = 100°C 1000 25 −55 100 IB = 1 mA 0 0 2 4 6 8 Collector−emitter voltage 10 0.001 10 0.01 0.1 VCE (V) VCE (sat) – IC IC/IB = 50 Pulse test 1 Tc = 100°C 0.1 −55 25 0.01 0.001 0.01 1 0.1 Collector current Common emitter IC/IB = 50 Pulse test −55 Tc = 100°C 0.1 0.001 10 25 1 0.01 VCE – IB 10 VCE −55 Tc = 100°C 25 1 0 0 0.4 Common emitter Tc = 25°C Pulse test (V) Common emitter VCE = 2 V Pulse test 3 2 0.8 Base−emitter voltage 10 Collector current IC (A) IC (A) Collector−emitter voltage Collector current IC (A) 4 1 0.1 IC – VBE 5 10 VBE (sat) – IC 10 Common emitter Base−emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 10 1 Collector current IC (A) 1.2 1 3 2 1.6 0.1 IC = 1 A 0.01 0.001 1.6 VBE (V) 0.01 0.1 Base current IB 3 1 10 (A) 2005-02-28 Transient thermal resistance (junction−case) rth (j−c) (°C/W) 2SC5886A rth(j−c) – tw 10 Tc = 25°C Infinite heat sink Curves apply only to limited areas of thermal resistance (single nonrepetitive pulse). 1 0.001 0.01 0.1 Pulse width 1 tw 10 (s) Safe operating area 100 IC max (pulse)* Collector current IC (A) 10 100 µs* 10 µs* 1 ms* IC max (continuous)* 10 ms* 1 100 ms* DC operation Tc = 25°C 0.1 *: Single pulse Tc = 25°C Curves must be derated linearly with increase in temperature 0.01 0.1 1 Collector−emitter voltage VCEO max 10 100 VCE (V) 4 2005-02-28 2SC5886A RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-28