2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A (Z) Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2SB1691 Outline MPAK 3 1 2 Note: Marking is “WM-“. 1. Emitter 2. Base 3. Collector 2SD2655 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V Collector current IC 1 A Collector peak current ic(peak) 2 A Collector power dissipation PC 800* mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note: *When using alumina ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 60 V IC = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 50 V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 V IE = 10 µA, IC = 0 Collector cutoff current ICBO 100 nA VCB = 50 V, IE = 0 Emitter cutoff current IEBO 100 nA VEB = 5 V, IC = 0 DC current transfer ratio hFE 200 500 VCE = 2 V, IC = 0.1 A Collector to emitter saturation voltage VCE(sat) 0.16 0.3 V IC = 0.5 A, IB = 0.05 A, Pulse test Base to emitter saturation voltage VBE(sat) 0.91 1.2 V IC = 0.5 A, IB = 0.05 A, Pulse test Gain bandwidth product fT 280 MHz VCE = 2 V, IC = 0.1 A Collector output capacitance Cob 4.2 pF VCB = 10 V, IE = 0, f = 1 MHz Rev.1, Jun. 2001, page 2 of 6 2SD2655 Typical Output Characteristics (1) 200 1200 When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm Pulse 50 µA IB = 3 IC (mA) 1000 800 Collector Current Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 400 200 0 50 100 150 Ambient Temperature 250 µA 100 200 µA 150 µA 100 µA 50 µA 0 200 Ta 300 µA (°C) 2 Typical Output Characteristics (2) 5mA 6mA 10 V CE = 2V Pulse 2mA 300 IB = 1mA 200 100 Pulse 0.4 8 VCE (V) Typical transfer Characteristics 3mA 4mA 400 0 6 1000 Collector Current IC (mA) Collector Current Ic (mA) 500 4 Collector to Emitter Voltage 0.8 1.2 Collector to Emitter Voltage 1.6 100 10 1 2.0 VCE (V) 0 0.2 0.4 0.6 Base to Emitter Voltage 0.8 1.0 VBE (V) Rev.1, Jun. 2001, page 3 of 6 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 1000 100 10 VCE = 2V Pulse 1 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 2SD2655 Saturation Voltage vs. Collector Current 1 VBE(sat) 0.1 VCE(sat) 0.01 IC/IB = 10 Pulse 0.001 1 10 100 1000 1 Collector Current IC (mA) 100 1000 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 1000 500 fT (MHz) f = 1MHz IE = 0 100 Gain Bandwidth Product Collector Output Capacitance Cob (pF) 10 10 1 0.1 1 10 Collector to Base Voltage Rev.1, Jun. 2001, page 4 of 6 100 VCB (V) VCE = 2V Pulse 400 300 200 100 0 1 10 Collector Current 100 IC (mA) 1000 2SD2655 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK — Conforms 0.011 g Rev.1, Jun. 2001, page 5 of 6 2SD2655 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Jun. 2001, page 6 of 6