TOSHIBA TPCA8104

TPCA8104
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCA8104
High-Side Switching Applications
Portable Equipment Applications
Unit: mm
0.4±0.1
1.27
0.5±0.1
•
Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.)
•
High forward transfer admittance:|Yfs| = 50 S (typ.)
•
Low leakage current: IDSS = -10 µA (VDS = -60 V)
•
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
5.0±0.2
Small footprint due to small and thin package
6.0±0.3
•
0.05 M A
5
8
0.15±0.05
4
1
0.595
5.0±0.2
A
0.95±0.05
0.166±0.05
0.05 S
0.6±0.1
1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
-60
V
Gate-source voltage
V
VGSS
±20
DC
(Note 1)
ID
-40
Pulse
(Note 1)
IDP
-120
Drain power dissipation (Tc = 25°C)
PD
45
Drain power dissipation (t = 10 s)
(Note 2a)
PD
2.8
Drain power dissipation (t = 10 s)
(Note 2b)
PD
1.6
Single-pulse avalanche energy
(Note 3)
EAS
116
mJ
Avalanche current
IAR
-40
A
Repetitive avalanche energy
(Tc = 25°C) (Note 4)
EAR
4.5
mJ
Drain current
A
1.1±0.2
4
3.5±0.2
S
4.25±0.2
8
5
1, 2, 3: Source
5, 6, 7, 8: Drain
0.8±0.1
4: Gate
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
W
Circuit Configuration
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
8
7
6
5
1
2
3
4
Note: For Notes 1 to 4, see the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPCA8104
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case (Tc = 25°C)
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Rth (ch-a)
44.6
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
Rth (ch-b)
78.1
°C/W
Marking (Note 5)
TPCA
8104
Type
※
Lot No.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = -24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = -40 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: * Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the calendar year)
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TPCA8104
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cutoff current
IDSS
VDS = −60 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 20 V
−35
⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-on time
tr
−0.8
⎯
−2.0
VGS = −4 V, ID = −20 A
⎯
17
24
VGS = −10 V, ID = −20 A
⎯
11
16
VDS = −10 V, ID = −20 A
25
50
⎯
⎯
4300
⎯
⎯
450
⎯
⎯
600
⎯
⎯
10
⎯
⎯
20
⎯
VDS = −10 V, VGS = 0 V, f = 1 MHz
0V
VGS
−10 V
ton
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
ID = −20A
Output
RL = 1.5 Ω
Gate threshold voltage
4.7 Ω
Drain-source breakdown
voltage
tf
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“Miller”) charge
Qgd
VDD ∼
− −30 V
Duty <
= 1%, tw = 10 µs
VDD ≈ −48 V, VGS = −10 V
ID = −40 A
V
V
mΩ
S
pF
ns
⎯
60
⎯
⎯
200
⎯
⎯
90
⎯
⎯
16
⎯
⎯
28
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−120
A
⎯
⎯
1.2
V
VDSF
IDR = −40 A, VGS = 0 V
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TPCA8104
ID – VDS
ID – VDS
−50
−4
−10
−3.8
−3.6
−8
Common source
Tc = 25°C
Pulse test
−6
−3.2
−3.4
−5
−30
−3
−20
−2.8
−10
VGS = −2.6 V
0
−0.4
−1.6
−1.2
−0.8
Drain−source voltage
VDS
−3.8
−3.6
−3.4
−40
−3.2
−20
−2.8
−3
VGS = −2.6 V
0
(V)
Drain−source voltage
VDS
−40
25
Tc = −55°C
100
0
−2
−1
Common source
Tc = 25°C
Pulse test
(V)
VDS
Drain−source voltage
−60
−20
(V)
VDS – VGS
VDS = −10 V
Pulse test
−80
−5
−4
−1.0
Common source
Drain current ID (A)
−3
−2
−1
ID – VGS
−4
−3
Gate−source voltage VGS
−0.8
−0.6
ID = −40 A
−0.4
−10
0
−5
−20
−0.2
0
(V)
−4
−12
−8
−16
Gate−source voltage VGS
⎪Yfs⎪ – ID
−20
(V)
RDS (ON) – ID
100
100
Common source
Tc = 25°C
Tc = −55°C
10
100
25
1
Common source
VDS = −10 V
Drain−source ON-resistance
RDS (ON) (mΩ)
Forward transfer admittance ⎪Yfs⎪ (S)
Common source
Tc = 25°C
Pulse test
−60
−2.0
−100
0
−4
−6
−80
0
0
−5
−10
−8
Drain current ID (A)
Drain current ID (A)
−40
−100
Pulse test
VGS = −4 V
10
−10
Pulse test
0.1
−0.1
−1
−10
1
−1
−100
−10
Drain currrent ID
Drain current ID (A)
4
−100
(A)
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TPCA8104
RDS (ON) – Tc
IDR – VDS
−1000
50
(A)
Pulse test
40
30
Drain reverse current IDR
ID = −40 A
−10
20
−20
VGS = −4 V
10
ID = −10 A, −20 A, −40 A
VGS = −10V
0
−80
−40
−100
−5
−10
−10
−3
Common source
Tc = 25°C
Pulse test
0
40
Case temperature
80
Tc
120
−0.1
0
160
0.2
(°C)
0.4
C – VDS
Gate threshold voltage Vth (V)
1.2
VDS (V)
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
−1
−10
−2.0
−1.5
−1.0
Common source
VDS = −10 V
−0.5
ID = −1mA
Pulse test
0
−80
−100
−40
Drain−source voltage VDS (V)
(V)
Drain−source voltage
2.0
(2)
1.5
1.0
0.5
40
80
Ambient temperature
120
160
(°C)
120
Ta
−30
Common source
VDS
(1)
80
−60
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10s
2.5
40
Dynamic input/output
characteristics
PD – Ta
3.0
0
Case temperature Tc
−50
(°C)
VDD = −48 V
Pulse test
−20
−30
−15
−24
−24
−20
−12
−12
−10
VDD = −48 V
−10
−5
VGS
20
40
60
80
Total gate charge Qg
5
−25
Tc = 25°C
−40
0
0
160
ID = −40 A
VDS
100
120
(V)
(pF)
Capacitance C
1000
10
−0.1
(W)
1.0
Vth – Tc
Tc = 25°C
Drain power dissipation PD
0.8
−2.5
Ciss
0
0
0.6
Drain−source voltage
10000
100
VGS = 0 V
−1
−1
Gate−source voltage VGS
Drain−source ON-resistance
RDS (ON) (m Ω)
Common source
0
(nC)
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TPCA8104
rth – tw
rth (℃/W)
1000
(1) Tc = 25°C
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3)
Transient thermal impedance
100
(2)
10
(1)
1
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
100
1000
tw (s)
Safe operating area
PD – Tc
−1000
Drain power dissipation PD
(W)
50
ID max (pulse) *
Drain current ID (A)
−100
1 ms *
ID max (continuous) *
10 ms *
DC
operation
−10
40
30
20
10
0
0
40
80
120
160
Case temperature Tc(°C)
−1
* Single pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1
−1
Drain−source voltage
VDSS max
−10
−100
VDS (V)
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TPCA8104
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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