TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel U-MOSⅣ / N Channel U-MOSⅢ) TPCP8401 2.9±0.1 0.3 +0.1／−0.05 0.025 M 8 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel 0.24＋0.10 −0.09 1 0.95 0.95 3 2.9±0.2 Unit Drain-source voltage VDSS −30 30 V 0.475 JEDEC Drain-gate voltage (RGS = 20 kΩ) VDGR −30 30 V JEITA Gate-source voltage VGSS ±20 ±20 V TOSHIBA 0.05 S 2-6J1E S 1：SOURCE1 5：DRAIN2 Weight: 0.080 g (typ.) 2：GATE1 6：DRAIN2 3：SOURCE2 7：DRAIN1 8：DRAIN1 4：GATE2 Drain current (Note 1) ID −3.5 4.5 Pulse (Note 1) IDP −14 18 PD(1) TBD TBD PD(2) TBD TBD Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain Drain power power dissipation dissipation (t (t == 10s) 10s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) PD(1) TBD TBD A 0.8±0.05 ― 0.05±0.05 DC ― Circuit Configuration ＪＥＤＥＣ ― ＪＥＩＴＡ ― W TBD PD(2) TBD Circuit Configuration ―7 8 6 5 TOSHIBA (Note 2b) 2.0 (Note 4a) 3.3 (Note 4b) Single pulse avalanche energy EAS Avalanche current IAR Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) EAR TBD Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C −1.75 2.25 mJ A mJ 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. N-ch 1 2.8±0.1 2.4±0.1 0.65 A 0.16±0.05 Enhancement-mode : P Channel Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) S (typ.) P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) 4 2.8 • N Channel |Yfs| = +0.2 +0.2 Low leakage current: 1 1.6 • -0.1 Low drain-source ON resistance: 0.7±0.05 • P Channel RDS (ON) = 31 mΩ (typ.) N Channel RDS (ON) = 20 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = S (typ.) 5 4 6 1.16 +0.05 1.16 +0.05 −0.15 −0.15 • A Unit: mm -0.3 Preliminary Motor Dreive Notebook PC Portable Machines and Tools P-ch 2002-09-09 TPCP8401 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 2a) Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) Symbol Max Rth (ch-a) (1) TBD Rth (ch-a) (2) TBD Rth (ch-a) (1) TBD Rth (ch-a) (2) TBD Unit °C/W Marking Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: a) VDD = −24 V, Tch = 25°C (Initial), L =0.5 mH, RG = 25 Ω, IAR = −1.75 A b) VDD = 24 V, Tch = 25°C (Initial), L =0.5 mH, RG = 25 Ω, IAR = 2.25 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: • on lower left of the marking indicates Pin 1. 2 2002-09-09 TPCP8401 P-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 V (BR) DSX ID = −10 mA, VGS = 20 V −15 Vth VDS = −10 V, ID = −1 mA −0.8 −2.0 VGS = −4 V, ID = −1.75 A 43 56 VGS = −10 V, ID = −1.75 A 31 40 VDS = −10 V, ID = −1.75 A TBD TBD TBD TBD TBD Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz VGS Turn-ON time ton −10 V Turn-OFF time Total gate charge (gate-source plus gate-drain) tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd RL = 6.8 Ω 4.7 Ω Switching time Fall time ID = −1.75 A VOUT 0V VDD ∼ − −15 V Duty < = 1%, tw = 10 µs VDD ∼ − −24 V, VGS = −10 V, ID = −3.5 A TBD TBD TBD TBD TBD V V mΩ S pF ns TBD TBD nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP −14 A 1.2 V VDSF IDR = −3.5 A, VGS = 0 V 3 2002-09-09 TPCP8401 N-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 V (BR) DSX ID = 10 mA, VGS = −20 V 15 VDS = 10 V, ID = 1 mA 1.3 2.5 VGS = 4.5 V, ID = 2.25 A 30 39 VGS = 10 V, ID = 2.25 A 20 26 VDS = 10 V, ID = 2.25 A TBD TBD TBD TBD TBD Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VGS Turn-ON time ton 0V Turn-OFF time Total gate charge (gate-source plus gate-drain) tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd RL = 5.0 Ω 4.7 Ω Switching time Fall time ID = 2.25 A VOUT 10 V VDD ∼ − 15 V Duty < = 1%, tw = 10 µs VDD ∼ − 24 V, VGS = 10 V, ID =4.5 A TBD TBD TBD TBD TBD V V mΩ S pF ns TBD TBD nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 18 A −1.2 V VDSF IDR =4.5 A, VGS = 0 V 4 2002-09-09 TPCP8401 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 5 2002-09-09