1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A Fast switching device(Trr<4.0nS) Surface device type mounting D Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate E Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code F Mechanical Data Unit (mm) Dimensions Case : Flat lead SOD-323F small outline plastic package Unit (inch) Min Max Terminal: Matte tin plated, solderable per MIL-STD-202, Method 208 guaranteed A 1.15 1.35 0.045 0.053 B 2.30 2.70 0.091 0.106 High temperature soldering guaranteed: 260°C/10s C 0.25 0.40 0.010 0.016 Polarity : Indicated by cathode band D 1.60 1.80 0.063 0.071 Weight : 4.85±0.5 mg E 0.80 1.00 0.031 0.039 Marking Code : S1, S2, S3 F 0.05 0.20 0.002 0.008 Ordering Information Packing Marking 3K / 7" Reel S1 SOD-323F 1N4448WS RR 3K / 7" Reel S2 SOD-323F 1N914BWS RR 3K / 7" Reel S3 SOD-323F 1N4148WS RRG 3K / 7" Reel S1 SOD-323F 1N4448WS RRG 3K / 7" Reel S2 SOD-323F 1N914BWS RRG 3K / 7" Reel S3 Part No. Max Pin Configuration SOD-323F 1N4148WS RR Package Min Suggested PAD Layout Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Symbol Value Units PD 200 mW V VRRM 100 Reverse Voltage VR 100 V Non-Repetitive Peak Forward Current IFRM 300 mA IO 150 mA Mean Forward Current Thermal Resistance (Junction to Ambient) RθJA 500 °C/W Junction and Storage Temperature Range TJ, TSTG -65 to + 150 °C Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : E10 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode Electrical Characteristics Type Number Symbol IR= 100uA IR= 5uA Reverse Breakdown Voltage V(BR) Forward Voltage 1N4448WS, 1N914BWS 1N4148WS 1N4448WS, 1N914BWS VF Reverse Leakage Current IR Junction Capacitance Reverse Recovery Time IF= 5.0mA IF= 10.0mA IF= 100.0mA VR= 20V VR= 75V VR=0, f=1.0MHz IF=10mA, IR=60mA, RL=100Ω, IRR=1mA CJ Trr Min 100 75 Max - Units 0.62 - 0.72 1.0 1.0 25 5.0 4.0 4.0 nA μA pF ns Symbol K D A D1 D2 E F P0 P1 T W W1 Dimension(mm) 2.40 Max. 1.5 ± 0.1 178 ± 1 50 Min. 13.0 ± 0.5 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.10 0.6 Max. 8.30 Max. 14.4 Max V V Tape & Reel specification TSC label Item Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Top Cover Tape Carieer Tape Any Additional Label (If Required) W1 A D2 D1 User Direction of Feed Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10° within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : E10 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Forward Voltage vs Forward Current FIG 2 Reverse Current vs Reverse Voltage 1.40 100 Reverse Current (uA) Forward Voltage (V) 1.20 1.00 25°C 0.80 0.60 125° 0.40 10 Ta=25°C 1 0.1 0.20 0.00 0.01 0.1 1 10 100 1000 0.01 0 Forward Current (mA) 20 60 80 100 120 Reverse Voltage (V) FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 1.2 250 VR=0V Tj=25°C f=1MHz 200 Junction Capacitance (pF) Power Dissipation (mW) 40 150 100 50 0 1.1 1.1 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0 25 50 75 100 125 Ambient Temperature (°C) 150 175 0 1 2 3 4 5 6 7 8 9 10 Reverse Voltage (V) Version : E10