ESH3B - ESH3D CREAT BY ART 3.0AMPS Surface Mount Super Fast Rectifiers SMC/DO-214AB Pb RoHS COMPLIANCE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef, Ideal for automated place ment Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Qualifited as per AEC-Q101 High temperature soldering: 260℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Marking Diagram Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed G = Green Compound Y = Year M = Work Month Polarity: Color band denotes cathode Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 grams ESH3X = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number ESH3D Unit 150 200 V 105 140 V 150 200 V Symbol ESH3B ESH3C Maximum Repetitive Peak Reverse Voltage VRRM 100 Maximum RMS Voltage VRMS 70 Maximum DC Blocking Voltage VDC 100 Maximum Average Forward Rectified Current IF(AV) 3 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load IFSM 125 A VF 0.90 V Maximum Instantaneous Forward Voltage (Note 1) @3A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=125 ℃ IR 5 uA 150 Maximum Reverse Recovery Time (Note 2) Trr 25 nS Typical Junction Capacitance (Note 3) Cj 45 pF RθjA RθjL 47 12 TJ - 55 to + 175 O C TSTG - 55 to + 175 O C Typical Thermal Resistance Operating Temperature Range Storage Temperature Range O Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:B11 C/W RATINGS AND CHARACTERISTIC CURVES (ESH3B THRU ESH3D) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT (A) 3.5 125 8.3mS Single Half Sine Wave JEDEC Method PEAK FORWARD SURGE A CURRENT (A) 3 2.5 2 1.5 1 RESISTER OR INDUCTIVE LOAD 0.5 100 75 50 25 0 0 0 25 50 75 100 125 150 175 1 o 10 NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISRICS 1000 INSTANTANEOUS REVERSE CURRENT (uA) INSTANTANEOUS FORWARD CURRENT (A) 10 TA=125℃ 100 1 0.1 TA=25℃ Pulse Width=300us 1% Duty Cycle TA=75℃ 10 1 TA=25℃ 0.1 0.01 0 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 TRANSIENT THERMAL IMPEDANCE A (℃/W) 50 25 0 10 REVERSE VOLTAGE (V) 60 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 75 1 40 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100 100 0.1 20 1.2 FIG. 5 TYPICAL JUNCTION CAPACITANCE CAPACITANCE (pF) 100 100 10 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION(s) Version:B11