MBRF10H100CT - MBRF10H200CT CREAT BY ART Pb 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.25", (6.35mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Case: ITO-220AB molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 MBRF10HXXCT G = Green Compound Polarity: As marked Y = Year Mounting position:Any WW = Work Week Mounting torque: 5 in. - lbs, max Weight: 1.73 grams Marking Diagram = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF 10H100CT MBRF 10H150CT MBRF 10H200CT Unit Maximum Repetitive Peak Reverse Voltage VRRM 100 150 200 V Maximum RMS Voltage VRMS 70 105 140 V Maximum DC Blocking Voltage VDC 100 150 200 V Maximum Average Forward Rectified Current at TC=125℃ IF(AV) 10 A Peak Repetitive Surge Current (Rated VR, Square Wave, 20KHz) at Tc=133℃ IFRM 10 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC Method) IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM Type Number Maximum Instantaneous Forward Voltage (Note 2) IF=5A, TA=25℃ IF=5A, TA=125℃ IF=10A, TA=25℃ IF=10A, TA=125℃ Maximum Reverse Current @ Rated VR TA=25 ℃ TA=125 ℃ VF 1 0.5 0.85 0.88 0.75 0.75 0.95 0.97 V 0.85 0.85 IR A 5 uA 1 mA Voltage Rate of Change,(Rated VR) dV/dt 10000 Typical Thermal Resistance RθjC 3.5 TJ - 65 to + 175 O C TSTG - 65 to + 175 O C Operating Temperature Range Storage Temperature Range V/us O Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Version:E11 C/W RATINGS AND CHARACTERISTIC CURVES (MBRF10H100CT THRU MBRF10H200CT) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 12 PEAK FORWARD SURGE A CURRENT (A) AVERAGE FORWARD A CURRENT (A) 180 10 8.3mS Single Half Sine Wave JEDEC Method 150 8 120 6 4 RESISTIVE OR INDUCTIVELOA 2 0 50 60 70 80 90 60 30 0 90 100 110 120 130 140 150 160 170 180 CASE TEMPERATURE ( oC) 1 FIG. 3 TYPICAL FORWARD CHARACTERISRICS 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4 TYPICAL REVERSE CHARACTERISTICS 10 100 INSTANTANEOUS REVERSE A CURRENT (mA) INSTANTANEOUS FORWARD A CURRENT (A) TA=125℃ 10 TA=25℃ 1 TA=25℃ PULSE WIDTH=300uS 1% DUTY CYCLE 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE (V) 1.2 0.1 TA=75℃ 0.01 TA=25℃ 0.001 0.0001 0.1 0.6 TA=125℃ 1 0 1.3 40 60 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 1000 100 900 800 TRANSIENT THERMAL IMPEDANCE(℃/W) JUNCTION CAPACITANCE (pF) A 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 700 600 500 400 300 10 1 200 100 0.1 0.1 1 10 REVERSE VOLTAGE (V) 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) Version:E11