SS22 - SS215 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .008(.20) .004(.10) .209(5.30) .201(5.10) Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS SS SS SS Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) IF= 2.0A @ 25oC @ 100oC o Maximum DC Reverse Current @ TA =25 C at o Rated DC Blocking Voltage @ TA=125 C Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) Operating Temperature Range VRRM VRMS VDC 22 20 14 20 24 40 28 40 SS 26 60 42 60 25 50 35 50 SS 29 90 63 90 SS 210 100 70 100 SS Units 215 150 V 105 V 150 V I(AV) 2.0 A IFSM 50 A 0.5 0.4 VF 0.70 0.65 0.4 IR 10 Cj R θJL R θJA TJ 0.85 0.95 0.70 0.80 0.1 5.0 130 17 75 -65 to +125 Storage Temperature Range Notes: 23 30 21 30 -65 to +150 -65 to +150 TSTG 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. - 40 - V mA mA pF o C/W o C C o Version: B07 RATINGSAND CHARACTERISTIC CURVES (SS22 THRU SS215) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT RESISTIVE OR INDUCTIVE LOAD 1.5 SS25-SS215 SS22-SS24 1.0 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 2.0 50 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 40 30 20 10 0 0 1 O LEAD TEMPERATURE. ( C) 10 NUMBER OF CYCLES AT 60Hz 100 FIG.4-TYPICALREVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 SS22-SS24 SS25-SS215 50 O TJ=25 C INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) O SS25-SS26 10 SS22-SS24 1 SS29-SS210 0.1 SS215 PULSE WIDTH=300 S 1% DUTY CYCLE 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ=125 C 10 1 O TJ=75 C 0.1 0.01 O TJ=25 C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 1.6 FORWARD VOLTAGE. (V) FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) O Tj=25 C f=1.0MHz Vsig=50mVp-p 100 10 0.1 SS29-SS215 SS22-SS24 SS25-SS26 1 10 REVERSE VOLTAGE. (V) 100 TRANSIENT THERMAL IMPEDANCE. (OC/W) 100 400 10 1 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) 10 Version: B07 100