TSC5302D High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation ● No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. ● Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor with Diode Ordering Information Part No. Package Packing TO-252 TO-252 TO-251 TO-251 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel 75pcs / Tube 75pcs / Tube TSC5302DCP RO TSC5302DCP ROG TSC5302DCH C5 TSC5302DCH C5G Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit VCBO VCEO VEBO IC 700 400 10 2 V V V A Collector Peak Current (tp <5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tp <5ms) IBM 2 A Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current o Total Dissipation @ Tc ≤ 25 C TO-251 TO-252 Maximum Operating Junction Temperature Ptot W 25 +150 o TSTG -65 to +150 o Symbol Limit TJ Storage Temperature Range 1.5 C C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA 1/6 Unit 6.25 o 100 o C/W C/W Version: F10 TSC5302D High Voltage NPN Transistor with Diode Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage a Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current a Collector-Emitter Saturation Voltage a Base-Emitter Saturation Voltage DC Current Gain Turn On Time Storage Time Fall Time Conditions Symbol Min Typ Max Unit IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC =0.5A, IB =0.1A IC =1A, IB =0.25A IC =0.5A, IB =0.1A IC =1A, IB =0.25A VCE =5V, IC =10mA BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 VBE(SAT)2 700 400 10 ------- ------1.1 --- ---1 1 0.5 1.5 1.1 1.2 V V V uA uA hFE 1 10 -- -- VCE =5V, IC =400mA hFE 2 10 -- 30 VCE =5V, IC =1A VCC =250V, IC =1A, IB1=IB2 =0.2A, tp =25uS Duty Cycle<1% hFE 3 5 ---- -0.15 0.5 0.2 -0.3 0.9 0.4 --- --- 800 1.4 tON tSTG tf V V uS uS uS Diode Fall Time IC =1A tF Forward Voltage Drop IC =1A Vf uS V Notes: a. Pulsed duration = 300uS, duty cycle ≤2% 2/6 Version: F10 TSC5302D High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/6 Version: F10 TSC5302D High Voltage NPN Transistor with Diode TO-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.290 BSC 0.090 BSC 4.600 BSC 0.180 BSC 7.000 7.200 0.275 0.283 6.000 6.200 0.236 0.244 6.400 6.604 0.252 0.260 2.210 2.387 0.087 0.094 0.010 0.127 0.000 0.005 5.232 5.436 0.206 0.214 0.666 0.889 0.026 0.035 0.633 0.889 0.025 0.035 0.508 REF 0.020 REF 0.900 1.500 0.035 0.059 2.743 REF 0.108 REF 0.660 0.940 0.026 0.037 1.397 1.651 0.055 0.065 1.100 REF 0.043 REF Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/6 Version: F10 TSC5302D High Voltage NPN Transistor with Diode TO-251 Mechanical Drawing DIM A A1 b b1 b2 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.19 2.38 0.086 0.094 0.89 1.14 0.035 0.045 0.64 0.89 0.025 0.035 0.76 1.14 0.030 0.045 5.21 5.46 0.205 0.215 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.10 0.235 0.240 6.35 6.73 0.250 0.265 2.28 BSC. 0.90 BSC. 8.89 9.65 0.350 0.380 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: F10 TSC5302D High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. 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