TSD2150A Low Vcesat NPN Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCBO 80V BVCEO 50V IC 3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A Structure ● ● 0.5V @ IC / IB = 2A / 200mA Epitaxial Planar Type NPN Silicon Transistor Part No. Package Packing TSD2150ACY RM TSD2150ACT B0 TSD2150ACT A3 SOT-89 TO-92 TO-92 1Kpcs / 7” Reel 1K / Bulk 2K / Ammo Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse SOT-89 TO-92 Symbol Limit Unit VCBO VCEO VEBO 80 50 6 3 6 (note1) 0.6 0.75 +150 - 55 to +150 V V V IC PD Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. TJ TSTG A W o C C o Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 60V, IE = 0 VEB = 3V, IC = 0 IC / IB = 1A / 50mA Collector-Emitter Saturation Voltage IC / IB = 2A / 200mA Base-Emitter Saturation Voltage IC / IB = 2A / 200mA VCE = 2V, IC = 100mA DC Current Transfer Ratio VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE =5V, IE=0.1A, Transition Frequency f=100MHz Output Capacitance VCB = 10V, f=1MHz Note: Pulse test: pulse width ≤380uS, Duty cycle≤2% 1/5 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE 1 hFE 2 hFE 3 80 50 6 -----180 200 150 -----0.1 0.25 ----- ---0.1 0.1 0.25 0.5 2 -400 -- V V V uA uA fT -- 90 -- MHz Cob -- 45 -- pF V V Version: B11 TSD2150A Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Collector Current Figure 3. VBE(SAT) v.s. Collector Current Figure 4. Power Derating Curve 2/5 Version: B11 TSD2150A Low Vcesat NPN Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J 3/5 SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Version: B11 TSD2150A Low Vcesat NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H 4/5 TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Version: B11 TSD2150A Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B11