TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Block Diagram ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode. Ordering Information Part No. TSM2N60CP RO TSM2N60CH C5 TSM2N60CZ C0 Package Packing TO-252 TO-251 TO-220 2.5Kpcs/ 13” Reel 75pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a,b Continuous Source Current (Diode Conduction) Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) TO-251 / TO-252 o Maximum Power Dissipation @ Tc = 25 C TO-220 Operating Junction Temperature Operating Junction and Storage Temperature Range 1/8 Symbol Limit Unit VDS VGS ID IDM IS 600 ±30 2 9 1 V V A A A EAS 20 mJ PDTOT TJ TJ, TSTG 70 70 +150 -55 to +150 W o C C o Version: E11 TSM2N60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol TO-251 / TO-252 Thermal Resistance - Junction to Case TO-220 Thermal Resistance - Junction to Ambient TO-251 / TO-252 TO-220 Notes: Surface mounted on FR4 board t ≤ 10sec Limit Unit 2.87 RӨJC o C/W 2.32 110 RӨJA o C/W 62.5 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1A RDS(ON) -- 4.4 5 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ± 100 nA Forward Transconductance VDS = 40V, ID = 1A gfs -- 5 -- S Diode Forward Voltage IS = 2A, VGS = 0V VSD -- -- 1.6 V Qg -- 13 22 Qgs -- 2 -- Qgd -- 6 -- Ciss -- 435 -- Coss -- 56 -- Crss -- 9.2 -- td(on) -- 12 -- tr -- 21 -- td(off) -- 30 -- -- 24 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 400V, ID = 2A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 2A, Turn-Off Delay Time VDD = 300V, RG = 18Ω Turn-Off Fall Time tf Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. For design reference only, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/8 nS Version: E11 TSM2N60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: E11 TSM2N60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: E11 TSM2N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/8 Version: E11 TSM2N60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/8 Version: E11 TSM2N60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing DIM A B C D E F G G1 H H1 J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: E11 TSM2N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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