UTC-IC 10N65

UNISONIC TECHNOLOGIES CO., LTD
10N65
Power MOSFET
10A, 650V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
1
The UTC 10N65 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„
1
TO-220F
FEATURES
* RDS(ON) [email protected] =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
„
TO-220
1
TO-220F1
SYMBOL
1
2.Drain
TO-263
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N65L-TA3-T
10N65G-TA3-T
10N65L-TF1-T
10N65G-TF1-T
10N65L-TF3-T
10N65G-TF3-T
10N65L-TQ2-R
10N65G-TQ2-R
10N65L-TQ2-T
10N65G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
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10N65
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
± 30
V
Avalanche Current (Note 2)
IAR
10
A
10
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
38
A
700
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation TO-220F/TO-220F1
PD
50
W
TO-263
178
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-263
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATING
62.5
0.8
2.5
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
V
VDS = 650V, VGS = 0V
1
µA
100 nA
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 4.75A
0.72 0.86 Ω
DYNAMIC CHARACTERISTICS
1570 2040 pF
Input Capacitance
CISS
Output Capacitance
COSS
166 215 pF
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
18
24
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
23
55
ns
Turn-On Rise Time
tR
69 150 ns
VDD=325V, ID =10A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
144 300 ns
Turn-Off Fall Time
tF
77 165 ns
Total Gate Charge
QG
44
57
nC
VDS=520V, ID=10A, VGS=10 V
Gate-Source Charge
QGS
6.7
nC
(Note 1, 2)
Gate-Drain Charge
QGD
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
1.4
V
Maximum Continuous Drain-Source Diode
IS
10
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
38
A
Forward Current
420
ns
Reverse Recovery Time
trr
VGS = 0 V, IS = 10A,
dI
/
dt
=
100
A/µs
(Note
1)
Reverse Recovery Charge
QRR
4.2
µC
F
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
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10N65
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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10N65
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
„
Gate-Source Voltage, VCG (V)
Capacitance, (pF)
10N65
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-588.C
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10N65
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage,
BVDSS (Normalized)
„
Maximum Drain Current vs. Case Temperature
Maximum Safe Operating Area
2
10
10
10μs
8
100μs
101
Drain Current, ID (A)
Drain Current, ID (A)
Operation in this Area is United by RDM
1ms
10ms
100ms
DC
100
Notes:
1.TC=25℃
2.TJ=150℃
3.Single Pulse
10-1 0
10
102
101
Drain-Source Voltage, VDS (V)
6
4
2
103
0
25
50
75
100
125
Case Temperature, TC (℃)
150
Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
-1
10
0.1
0.05
0.02
PDW
0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
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t1
t2
100
101
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10N65
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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