UTC-IC 10N90G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD
10N90
Preliminary
10 Amps, 900 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
1
TO-220
„
DESCRIPTION
The UTC10N90 is a N-channel mode Power FET using UTC’s
advanced technology to provide costumers with planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 10N90 is generally applied in high efficiency switch
mode power supply.
„
1
TO-220F1
FEATURES
* Lower Leakage Current: 25µA (Max.) @ VDS = 900V
* Improved Gate Charge
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N90L-TA3-T
10N90G-TA3-T
10N90L-TF1-T
10N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F1
S: Source
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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10N90
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
RATINGS
UNIT
900
V
±30
V
Continuous
10
A
Drain Current
Pulsed (Note 1)
40
A
Avalanche Current (Note 1)
10
A
Single Pulsed (Note 2)
794
mJ
Avalanche Energy
Repetitive (Note 1)
28
mJ
Peak Diode Recovery dv/dt (Note 3)
1.5
V/ns
TO-220
156
W
Power Dissipation
PD
TO-220F1
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Voltage
Gate-Source Voltage
„
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
THERMAL CHARACTERISTICS
Junction to Ambient
Junction to Case
PARAMETER
TO-220
TO-220F1
TO-220
TO-220F1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.8
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
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10N90
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
900
Breakdown Voltage Temperature
△BVDSS/△TJ ID=250µ
1.11
Coefficient
Drain-Source Leakage Current
IDSS
VDS=900V
Forward
VGS=+30V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=5V, ID=250µA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
Forward Transconductance
gFS
VDS=50V, ID=5A (Note 4)
7.85
DYNAMIC PARAMETERS
Input Capacitance
CISS
2760
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
245
105
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
127
VGS=10V, VDS=720V, ID=10A
Gate to Source Charge
QGS
19.2
(Note 4, 5)
56.8
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
29
Rise Time
tR
54
VDD=450V, ID=10A, RG=9.6Ω
(Note
4,
5)
Turn-OFF Delay Time
tD(OFF)
161
47
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral Reverse Pn-Diode In The
Maximum Body-Diode Pulsed Current
MOSFET
ISM
(Note1)
Drain-Source Diode Forward Voltage
VSD
IS=10A, VGS=0V, TJ=25°C
(Note 4)
IF=10A, dIF/dt=100A/µs, TJ=25°C
Body Diode Reverse Recovery Time
tRR
690
(Note 4)
Body Diode Reverse Recovery Charge
QRR
11.94
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 15mH, IAS = 10A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 190A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MAX UNIT
V
V/°C
25
100
-100
µA
nA
nA
3.5
1.2
V
Ω
S
3580
290
125
pF
pF
pF
165
70
20
330
105
nC
nC
nC
ns
ns
ns
ns
10
A
40
A
1.4
V
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
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Preliminary
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VF
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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