UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply, 1 TO-220F1 FEATURES * 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V * High switching speed * Improved dv/dt capability * 100% avalanche tested * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N90L-TA3-T 11N90G-TA3-T 11N90L-TF1-T 11N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F1 S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 6 QW-R502-497.a 11N90 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified) PARAMETER RATINGS UNIT 900 V ±30 V Continuous 11 A Drain Current Pulsed (Note 1) 28.0 A Single Pulsed (Note 2) 960 mJ Avalanche Energy Repetitive (Note 1) 12 mJ Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns TO-220 160 W Power Dissipation PD TO-220F1 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS ID IDM EAS EAR dv/dt THERMAL CHARACTERISTICS Junction to Ambient Junction to Case PARAMETER TO-220 TO-220F1 TO-220 TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 62.5 0.78 2.48 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-497.a 11N90 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS ID=250µA, VGS=0V MIN IGSS www.unisonic.com.tw V 1.0 V/°C VDS=900V, VGS=0V VDS=720V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A Forward Transconductance gFS VDS=50V, ID=5.5A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=720V, ID=11.0A Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=450V, ID=11.0A, RG=25Ω Rise Time tR (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM (Note1) Drain-Source Diode Forward Voltage VSD IS=11A, VGS=0V (Note 4) VGS=0V, IS=11.0A, dIF/dt=100A/µs Body Diode Reverse Recovery Time tRR (Note 4) Body Diode Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD TYP MAX UNIT 900 △BVDSS/△TJ ID=250µA, Referenced to 25°C IDSS Forward Reverse TEST CONDITIONS 10 100 100 -100 0.91 5.0 1.1 µA nA nA V Ω S 2530 3290 215 280 23 30 pF pF pF 60 13 25 60 130 130 85 130 270 270 180 nC nC nC ns ns ns ns 11 A 28.0 A 1.4 V 1000 17.0 80 ns µC 3 of 6 QW-R502-497.a 11N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 6 QW-R502-497.a 11N90 Preliminary Power MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-497.a 11N90 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-497.a