UNISONIC TECHNOLOGIES CO., LTD 15N20 Preliminary Power MOSFET 15A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N20 is universally applied in low voltage such as automotive, high efficiency switching for DC/DC converters and DC motor control, etc. FEATURES * RDS(ON)=0.12Ω @ VGS=10V,ID=7.5A * Low Gate Charge (Typical 20nC) * Low CRSS (Typical 25pF) * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N20L-TN3-R 15N20G-TN3-R 15N20L-TN3-T 15N20G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 3 QW-R502-717.a 15N20 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 200 V VGSS ±30 V 15 A Continuous ID Continuous Drain Current Pulsed IDM 60 A Single Pulsed Avalanche Current IAS 15 A Single Pulsed Avalanche Energy EAS 340 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 110 1.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=200V, VGS=0V Forward VGS=+30V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=120V, ID=18A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=1A, RG=25Ω, VGS=10V, RL=30 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=15A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 3 V 1 µA +100 nA -100 nA 5 0.12 0.14 V Ω 830 1080 pF 200 260 pF 25 33 pF 20 5.6 10 16 133 38 62 26 40 275 85 135 nC nC nC ns ns ns ns 15 60 1.5 A A V 2 of 3 QW-R502-717.a 15N20 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-717.a