UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * VDS = 600V * ID = 0.5A * RDS(ON) =15Ω@VGS = 10V. * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N60AL-T92-B 1N60AG-T92-B 1N60AL-T92-K 1N60AG-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S Packing Tape Box Bulk 1 of 8 QW-R502-091,F 1N60A Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 0.5 A Pulsed Drain Current (Note 2) IDM 2 A Single Pulse(Note 3) EAS 50 mJ Avalanche Energy 3.6 4.0 mJ Repetitive(Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 3 W PD Derate above 25°C 25 mW/°C Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C 4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS 120 UNIT °C/W 2 of 8 QW-R502-091,F 1N60A Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Forward VGS = 20V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0V Breakdown Voltage Temperature ID = 250μA △BVDSS/△TJ Coefficient referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 0.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) VDD=300V, ID=0.5A, RG=5Ω Turn-On Rise Time tR (Note 1,2) Turn-Off Delay Time tD (OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=0.8A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, ISD = 1.2A di/dt = 100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 10 100 -100 0.4 2.0 11 12 11 40 18 8 1.8 4.0 136 0.3 V μA nA nA V/°C 4.2 15 V Ω 100 20 3 pF pF pF 34 32 90 46 10 ns ns ns ns nC nC nC 1.6 V 1.2 A 4.8 A ns μC 3 of 8 QW-R502-091,F 1N60A Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-091,F 1N60A Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2μF tF Switching Waveforms Same Type as D.U.T. 50kΩ tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 1mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-091,F 1N60A Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics Output Characteristics 4.5V 10-1 250μs Pulse Test TC=25°C 4 6 8 Gate-Source Voltage, VGS (V) On-Resistance vs. Drain Current Source- Drain Diode Forward Voltage TJ=25°C 10 VGS=0V 250μs Pulse Test VGS=10V 20 VGS=20V 15 10 5 100 10-1 0 0.0 0.5 1.5 1.0 Drain Current, ID (A) 2.0 0.2 2.5 Capacitance vs. Drain-Source Voltage 200 CISS 150 Capacitance (pF) 2 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (Ω) Drain-Source Voltage, VDS (V) 25 CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD COSS 100 50 0 100 10-1 101 100 30 Drain Current, ID (A) VDS=50V 250μs Pulse Test CRSS VGS=0V f = 1MHz -1 10 0 1 10 10 Drain-SourceVoltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) 1.6 Gate Charge vs. Gate-Source Voltage 12 Gate-Source Voltage, VGS (V) Drain Current, ID (A) 100 VGS Top: 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5V Bottorm:4.5V VDS=480V 10 VDS=300V VDS=120V 8 6 4 2 0 ID=1.0A 0 2 6 4 8 Total Gate Charge, QG (nC) 10 6 of 8 QW-R502-091,F 1N60A Power MOSFET TYPICAL CHARACTERISTICS (Cont.) On-Resistance vs. Temperature 3.0 VGS=0V ID=250μA Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS, (Normalized) Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 VGS=10V ID=0.5A 2.5 2.0 1.5 1.0 0.5 0.0 0.8 -100 0 100 150 -50 50 Junction Temperature, TJ (°C) -100 200 Max. Safe Operating Area Max. Drain Current vs. Case Temperature Operation in This Area is Limited by RDS(on) 100μs 1ms 100 10ms 10-1 10-2 Tc=25°C TJ=150°C Single Pulse 100 200 1.0 Drain Current, ID (A) Drain Current, ID (A) 10 1 -50 50 100 150 0 Junction Temperature, TJ (°C) 101 102 Drain-Source Voltage, VDS (V) 103 0.5 0.0 25 50 125 100 75 Case Temperature, TC (°C) 150 Thermal Response, θJC (t) Thermal Response 0.5 10 0 θJC (t) = 3.45°C/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) 0.2 0.1 10 0.0 5 2 0.0 -1 1 0.0 10-5 Single pulse 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-091,F 1N60A Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-091,F