UTC-IC 1N60A

UNISONIC TECHNOLOGIES CO., LTD
1N60A
Power MOSFET
0.5A, 600V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„
FEATURES
* VDS = 600V
* ID = 0.5A
* RDS(ON) [email protected] = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60AL-T92-B
1N60AG-T92-B
1N60AL-T92-K
1N60AG-T92-K
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Box
Bulk
1 of 8
QW-R502-091,F
1N60A
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
0.5
A
Pulsed Drain Current (Note 2)
IDM
2
A
Single Pulse(Note 3)
EAS
50
mJ
Avalanche Energy
3.6
4.0
mJ
Repetitive(Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
3
W
PD
Derate above 25°C
25
mW/°C
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
RATINGS
120
UNIT
°C/W
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QW-R502-091,F
1N60A
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
Forward
VGS = 20V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature
ID = 250μA
△BVDSS/△TJ
Coefficient
referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
VDD=300V, ID=0.5A, RG=5Ω
Turn-On Rise Time
tR
(Note 1,2)
Turn-Off Delay Time
tD (OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=0.8A
Gate-Source Charge
QGS
(Note 1,2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD = 1.2A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS=0V, ISD = 1.2A
di/dt = 100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
600
10
100
-100
0.4
2.0
11
12
11
40
18
8
1.8
4.0
136
0.3
V
μA
nA
nA
V/°C
4.2
15
V
Ω
100
20
3
pF
pF
pF
34
32
90
46
10
ns
ns
ns
ns
nC
nC
nC
1.6
V
1.2
A
4.8
A
ns
μC
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QW-R502-091,F
1N60A
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R502-091,F
1N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2μF
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
1mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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QW-R502-091,F
1N60A
„
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
Output Characteristics
4.5V
10-1
250μs Pulse Test
TC=25°C
4
6
8
Gate-Source Voltage, VGS (V)
On-Resistance vs. Drain Current
Source- Drain Diode Forward Voltage
TJ=25°C
10
VGS=0V
250μs Pulse Test
VGS=10V
20
VGS=20V
15
10
5
100
10-1
0
0.0
0.5
1.5
1.0
Drain Current, ID (A)
2.0
0.2
2.5
Capacitance vs. Drain-Source Voltage
200
CISS
150
Capacitance (pF)
2
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance, RDS(ON) (Ω)
Drain-Source Voltage, VDS (V)
25
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
COSS
100
50
0
100
10-1
101
100
30
Drain Current, ID (A)
VDS=50V
250μs Pulse Test
CRSS
VGS=0V
f = 1MHz
-1
10
0
1
10
10
Drain-SourceVoltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
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0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Voltage, VSD (V)
1.6
Gate Charge vs. Gate-Source Voltage
12
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
100
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5V
Bottorm:4.5V
VDS=480V
10
VDS=300V
VDS=120V
8
6
4
2
0
ID=1.0A
0
2
6
4
8
Total Gate Charge, QG (nC)
10
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QW-R502-091,F
1N60A
„
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
On-Resistance vs. Temperature
3.0
VGS=0V
ID=250μA
Drain-Source On-Resistance, RDS(ON)
(Normalized)
Drain-Source Breakdown Voltage, BVDSS,
(Normalized)
Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
VGS=10V
ID=0.5A
2.5
2.0
1.5
1.0
0.5
0.0
0.8
-100
0
100 150
-50
50
Junction Temperature, TJ (°C)
-100
200
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
Operation in This
Area is Limited by
RDS(on)
100μs
1ms
100
10ms
10-1
10-2
Tc=25°C
TJ=150°C
Single Pulse
100
200
1.0
Drain Current, ID (A)
Drain Current, ID (A)
10
1
-50
50
100 150
0
Junction Temperature, TJ (°C)
101
102
Drain-Source Voltage, VDS (V)
103
0.5
0.0
25
50
125
100
75
Case Temperature, TC (°C)
150
Thermal Response, θJC (t)
Thermal Response
0.5
10
0
θJC (t) = 3.45°C/W Max.
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
0.2
0.1
10
0.0
5
2
0.0
-1
1
0.0
10-5
Single pulse
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
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QW-R502-091,F
1N60A
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-091,F