UTC-IC 1N60L-X-TN3-T

UNISONIC TECHNOLOGIES CO., LTD
1N60
Power MOSFET
1.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
1
„
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„
FEATURES
„
SYMBOL
TO-92
SOT-223
1
1
TO-220
TO-220F
1
1
* RDS(ON) [email protected] = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
TO-252
1
TO-126
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1N60L-x-AA3-R
1N60G-x-AA3-R
SOT-223
1N60L-x-T92-B
1N60G-x-T92-B
TO-92
1N60L-x-T92-K
1N60G-x-T92-K
TO-92
1N60L-x-TA3-T
1N60G-x-TA3-T
TO-220
1N60L-x-TF3-T
1N60G-x-TF3-T
TO-220F
1N60L-x-TM3-T
1N60G-x-TM3-T
TO-251
1N60L-x-TN3-R
1N60G-x-TN3-R
TO-252
1N60L-x-TN3-T
1N60G-x-TN3-T
TO-252
1N60L-x-T60-K
1N60G-x-T60-K
TO-126
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Box
Bulk
Tube
Tube
Tube
Tape Reel
Tube
Bulk
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QW-R502-052,I
1N60
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
600
V
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 1)
IDM
4.8
A
Single Pulsed (Note 2)
EAS
50
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
4.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
SOT-223
1
W
TO-251
28
W
TO-252
28
W
Power Dissipation
P
TO-220
40
W
D
TO-220F
21
W
TO-92(Ta=25℃)
1
W
TO-126
12.5
W
Junction Temperature
TJ
+150
℃
℃
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
1N60-A
1N60-B
„
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-92
TO-126
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-126
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJc
RATINGS
150
110
110
62.5
62.5
140
132
14
4.53
4.53
3.13
5.95
10
UNIT
℃/W
℃/W
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QW-R502-052,I
1N60
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
1N60-A
1N60-B
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
TEST CONDITIONS
BVDSS
VGS=0V, ID=250μA
IDSS
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
IGSS
Breakdown Voltage Temperature
△BVDSS/△TJ ID=250μA
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=300V, ID=1.2A, RG=50Ω
(Note 4,5)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=1.2A
Gate-Source Charge
QGS
(Note 4,5)
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS =1.2A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note1)
Reverse Recovery Charge
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
5. Essentially Independent of Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
650
10
100
-100
0.4
2.0
V
V
μA
nA
nA
V/℃
4.0
9.3 11.5
V
Ω
120 150
20
25
3.0 4.0
pF
pF
pF
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
ns
ns
ns
ns
nC
nC
nC
1.4
V
1.2
A
4.8
A
160
0.3
ns
μC
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QW-R502-052,I
1N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-052,I
1N60
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-052,I
1N60
Drain Current,ID (µA)
Drain Current, ID (A)
Drain Current,ID (mA)
TYPICAL CHARACTERISTICS
Drain Current,ID (µA)
„
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-052,I