UNISONIC TECHNOLOGIES CO., LTD 1N70 Power MOSFET 1.2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) =13.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N70L-T92-B 1N70G-T92-B 1N70L-T92-K 1N70G-T92-K 1N70L-T92-R 1N70G-T92-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tape Reel 1 of 8 QW-R502-171,C 1N70 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 1.2 A Continuous Drain Current ID 1.2 A Pulsed Drain Current (Note 2) IDM 4.8 A Single Pulsed (Note 3) EAS 50 mJ Avalanche Energy 4.0 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 3 W Junction Temperature TJ +150 ℃ ℃ Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 ℃ Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJc RATINGS 79 29 UNIT ℃/W ℃/W 2 of 8 QW-R502-171,C 1N70 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 0.6A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=350V, ID=1.2A, RG=50Ω Turn-On Rise Time tR (Note 2,3) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=560V, VGS=10V, ID=1.2A Gate-Source Charge QGS (Note 2,3) Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS = 1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS=0V, IS = 1.2A dIF/dt = 100A/μs (Note1) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 V 10 μA 100 nA -100 nA 0.4 V/℃ 2.0 4.0 9.3 13.5 V Ω 120 150 20 25 3.0 4.0 pF pF pF 5 25 7 25 5.0 1.0 2.6 20 60 25 60 6.0 ns ns ns ns nC nC nC 1.4 V 1.2 A 4.8 A 160 0.3 ns μC 3 of 8 QW-R502-171,C 1N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-171,C 1N70 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-171,C 1N70 Power MOSFET TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V VDS=50V 250μs Pulse Test Top: 100 100 125℃ 10-1 25℃ 250μs Pulse Test TC=25℃ 10-2 10-1 10-1 2 101 100 4 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (Ω) TJ=25℃ VGS=10V VGS=20V 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 8 10 Source- Drain Diode Forward Voltage On-Resistance vs. Drain Current 25 6 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (V) 30 -40℃ VGS=0V 250μs Pulse Test 100 125℃ 10-1 0.2 2.5 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) Capacitance (pF) Gate-Source Voltage, VGS (V) Drain Current, ID (A) 0.4 25℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-171,C 1N70 Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS, (Normalized) (V) TYPICAL CHARACTERISTICS(Cont.) Max. Drain Current vs. Case Temperature Max. Safe Operating Area 1.2 Operation in This Area is Limited by RDS(on) 101 Drain Current, ID (A) Drain Current, ID (A) 100μs 1ms 100 10ms DC 10-1 0.6 0.3 Tc=25℃ TJ=150℃ Single Pulse 10-2 100 0.9 101 102 103 Drain-Source Voltage, VDS (V) 0.0 25 50 75 100 125 150 Case Temperature, TC (℃) Thermal Response, θJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-171,C 1N70 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-171,C