UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment. FEATURES * Low Gate Charge * RDS(on) = 0.048 Ω (TYP.) * Avalanche Rugged Technology * 100% Avalanche Tested * Repetitive Avalanche at 100°C * High Current Capability * Operating Temperature: 150°C * Application Oriented Characterization SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 25N06L-TA3-T 25N06G-TA3-T 25N06L-TN3-T 25N06G-TN3-T 25N06L-TN3-R 25N06G-TN3-R Note: Pin Assignment: G: Gate, D: Drain, S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 6 QW-R502-450.b 25N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage (VGS=0) Drain-Gate Voltage (RGS=20kΩ) Gate-Source Voltage Drain Current (Continuous) SYMBOL VDS VDGR VGS TC=25°C TC=100°C ID RATINGS 60 60 ± 20 25 17 100 UNIT V V V A A A RATINGS 62.5 100 1.57 3 UNIT Drain Current (Pulsed) (Note 2) IDM Single Pulse Avalanche Energy EAS 100 mJ (starting TJ =25°C, ID =25A, VDD =25 V) TO-220 90 Power Dissipation at TC=25°C PD W TO-252 41 Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-252 TO-220 TO-252 θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw °C/W °C/W 2 of 6 QW-R502-450.b 25N06 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current (VGS=0) SYMBOL BVDSS IDSS TEST CONDITIONS ID=250µA, VGS=0V VDS=Max Rating VDS= Max Rating×0.8, TC=125°C VGS=±20V Gate- Source Leakage Current (VDS=0) IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=12.5A On State Drain Current ID(on) VDS>ID(on) ×RDS(ON)MAX, VGS=10V Forward Transconductance (Note 1) gFS VDS>ID(on) ×RDS(ON)MAX, ID=12.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=40V, VGS=10V, ID=25A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, ID=3A, RG=50Ω, VGS=10V Rise Time tR Turn-OFF Delay Time tD(OFF) VDD=40V, ID=25A, RG=50Ω, VGS=10V Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=25A, VGS=0V (Note 1) Source-Drain Current ISD Source-Drain Current (Pulsed) (Note 2) ISDM Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 V 1 10 ±100 2 25 7 2.9 4 0.048 0.065 11 µA nA V Ω A S 700 320 90 900 450 150 pF pF pF 26 8 9 30 90 80 80 40 45 130 120 120 nC nC nC ns ns ns ns 1.5 25 100 V A A 3 of 6 QW-R502-450.b 25N06 Preliminary Power MOSFET SWITCHING TIME TEST CIRCUIT V(BR)DSS VD IDM ID VDD VDD Fig. 2 Unclamped Inductive Waveforms RL VD D.U.T. RG VGS PW 2200µF 3.3µF VDD Fig. 3. Switching Times Test Circuits For Resistive Load UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-450.b 25N06 Preliminary Power MOSFET SWITCHING TIME TEST CIRCUIT (Cont.) 12V VDD 47kΩ 1kΩ 100nF VI=20V=VGMAX 2200µF IG=CONST 100Ω D.U.T. 2.7kΩ VG 47kΩ 1kΩ PW Fig. 4 Gate Charge Test Circuit 3.3µF A MOS D DIODE G 25Ω A A FAST DIODE L=100µH 1000µF B S B D B D.U.T. G VDD S RG + 85Ω - Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-450.b 25N06 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-450.b