UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) Lead-free: 2SB1260L Halogen-free: 2SB1260G ORDERING INFORMATION Normal 2SB1260-x-AB3-R 2SB1260-x-TN3-R Ordering Number Lead Free 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R Halogen Free 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel 1 of 4 QW-R208-017,E 2SB1260 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current SYMBOL VCBO VCEO VEBO ICM RATINGS -80 -80 -5 -2 UNIT V V V A IC -1 A 0.5 1.9 +150 -40 ~ +150 W W ℃ ℃ SOT-89 TO-252 Power Dissipation PD Junction Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW<300μs, Duty Cycle<2% TEST CONDITIONS IC= -50μA IC= -1mA IE= -50μA VCB=-60V VEB=-4V VCE=-3V, IOUT=-0.1A IC=-500mA, IB=-50mA VCE= -5V, IE=50mA, f=30MHz VCB=-10V, IE=0, f=1MHz MIN -80 -80 -5 TYP MAX -1 -1 390 -0.4 82 100 25 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE P 82 ~ 180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120 ~ 270 R 180 ~ 390 2 of 4 QW-R208-017,E Collector Saturation Voltage, VCE(SAT) ( V) DC Current Gain, hFE Collector Current, Ic(mA) Collector Current, Ic(mA) ■ Collector Output Capacitance, Cob (pF) Transition Frequency, fT(MHz) 2SB1260 www.unisonic.com.tw PNP SILICON TRANSISTOR TYPICAL CHARACTERICS UNISONIC TECHNOLOGIES CO., LTD QW-R208-017,E 3 of 4 2SB1260 PNP SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-017,E