UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R SOT-89 Note: Pin Assignment: E: EMITTER C: COLLECTOR B: BASE www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 B C E Packing Tape Reel 1 of 5 QW-R204-027.C 2SC4548 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING Collector-Base Voltage VCBO 400 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 5 Collector Current IC 200 Collector Current (PULSE) ICP 400 Collector Power Dissipation PC 1.3 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V mA mA W °C °C damaged. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collect-Base Breakdown Voltage Collect-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collect-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Reverse Transfer Capacitance Gain-Bandwidth Product Turn-on Time Turn-off Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) VBE(SAT) COB CRE fT TON TOFF TEST CONDITIONS IC= 10μA,IE=0 IC= 1mA,IB=0,RBE=∞ IE= 10μA,IC=0 VCB= 300V,IE=0 VEB=4V,IC=0 VCE=10V, Ic=50mA IC=50mA,IB=5mA IC=50mA,IB=5mA VCB=30V, f=1MHz VCB=30V,f=1MHz VCE=30V,IC=10mA See test circuit See test circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 400 5 TYP MAX 0.1 0.1 200 60 0.6 1.0 4 3 70 0.25 5.0 UNIT V V V μA μA V V pF pF MHz μs μs 2 of 5 QW-R208-027,C 2SC4548 NPN SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE D 60-120 E 100-200 TEST CIRCUIT (Unit : resistance : Ω, capacitance : F) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-027,C 2SC4548 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector cut-off Region DC Current Gain TA=-30 50 30 20 10 8 6 100 80 60 40 20 0 4 1 2 20 30 3 4 5 7 10 400 100 200 50 25 Collector Current,IC (mA) DC Current Gain, hFE 25 70 VCE=10V VCE=10V 70 100 -30 200 120 Ta=7 0 0 0.4 0.2 Collector Current,IC (mA) 0.6 0.8 1.0 Base-Emitter Voltage, VBE (V) Collector-Emitter Saturation Region Base-Emitter Voltage 1.4 0.3 IC/IB=10 IC/IB=10 0.2 Voltage, V(V) Voltage, V(V) 1.2 1 TA=-30 25 0.8 70 0.6 1 2 3 5 7 10 20 30 50 0.16 0.12 0.08 0.4 70 100 200 1 2 3 Collector Current, IC (mA) 1 tF 0.5 0.3 0.2 0.1 3 5 7 10 20 30 50 70 100 300 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 50 70 100 200 300 500 2 2 20 30 1000 3 0.7 5 7 10 Collector Current, IC (mA) IB=5mA TA=25°C ts 5 -30 0.04 300 10 7 25 TA=70 Collector Current,IC (mA) Time, t (μs) 1.2 10μs 200 1.0 ms 100 10 ms 50 dc 30 10 5 1 0.5 Single Pule TA=25 5 10 20 50 100 200 300 500 Collector-Emitter Voltage, VCE (V) 4 of 5 QW-R208-027,C 2SC4548 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-027,C