UTC-IC 2SC4617L-X-AL3-R

UNISONIC TECHNOLOGIES CO., LTD
2SC4617
NPN SILICON TRANSISTOR
GENERAL PURPOSE
TRANSISTOR
„
FEATURES
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC4617L-x-AE3-R
2SC4617G-x-AE3-R
2SC4617L-x-AL3-R
2SC4617G-x-AL3-R
2SC4617L-x-AN3-R
2SC4617G-x-AN3-R
„
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
C5X
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
0.15
A
SOT-523
PC
150
mW
Collector Power Dissipation
SOT-23/SOT-323
PC
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
„
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
fT
Cob
TEST CONDITIONS
IC= 50μA
IC= 1mA
IE=50μA
VCB=60V
VEB= 7V
VCE=6V, IC=1mA
IC=50mA, IB=5mA
VCE=12V, IE= -2mA, f=100MHz
VCE= 12V, IE= 0A, f=1MHz
MIN
60
50
7
TYP
MAX
0.1
0.1
560
0.4
120
180
2
3.5
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF hFE
RANK
RANGE
Q
120 ~ 270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
180 ~ 390
S
270 ~ 560
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
Grounded Emitter Propagation
Characteristics
20
10
5
25℃
2
1
Ta=100℃
-55℃
0.5
0.2
0.1
100
VCE = 6V
Ta = 25℃
Collector Current, IC (mA)
Collector Current, IC(mA)
50
Grounded Emitter Output Characteristics (I)
0.40mA
60
0.15mA
40
0.10mA
0.05mA
20
IB = 0A
0
Base to Emitter Voltage, VBE (V)
0.35mA
0.30mA
0.25mA
0.20mA
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage, VCE (V)
DC Current Gain, hFE
Collector Saturation Voltage,
VCE(SAT) (V)
DC Current Gain, hFE
Collector Current, IC (mA)
80
0.50mA
0.45mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Collector Saturation Voltage,
VCE(SAT) (V)
Collector saturation voltage, VCE(sat) (V)
Collector Output Capacitance vs. Collector-Base Voltage
Emitter Input Capacitance vs. Emitter-Base Voltage
Transition Frequency, fT (MHz)
Gain Bandwidth Product vs. Emitter
Current
Ta = 25℃
500 VCE =6V
200
100
50
-0.5 -1
-2
-5
-10 -20
-50
-100
20
Ta=25℃
f=1MHz
IE=0A
IC=0A
Cib
10
5
2
Cob
1
0.2
0.5
1
2
5
10
20
50
Collector to Base Voltage, VCB (V)
Emitter to Base Voltage, VEB (V)
Base Collector Time Constant (ps)
Collector Current, IE (mA)
Collector Output Capacitance, Cob (pF)
Emitter Input Capacitance, Cib (pF)
„
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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