UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220 * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC5027-x-TA3-T 2SC5027L-x-TA3-T 2SC5027-x-TF3-T 2SC5027L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SC5027L-x-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Rank (3) x: refer to Classification of hFE1 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-027,C 2SC5027 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Power Dissipation PC 50 W ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEX(SUS) L=2mH, Clamped ICBO VCB=800V, IE=0 IEBO VEB=5V, IC=0 hFE1 VCE=5V, IC=0.2A VCE=5V, IC=1A hFE 2 VCE (SAT) IC=1.5A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tS RL=200Ω tF MIN 850 800 7 TYP MAX 800 UNIT V V V V 10 8 10 10 40 µA µA 2 1.5 V V pF MHz µs µs µs 60 15 0.5 3 0.3 CLASSIFICATION of hFE1 RANK RANGE N 10 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 15 ~ 30 O 20 ~ 40 2 of 4 QW-R203-027,C 2SC5027 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristic Collector Current vs. Collector-Emitter Voltage Switching Time Time vs. Collector -Emitter Voltage 4.0 10 TIME, tON, tstg, tF (μs) Collector Current, IC (A) 3.6 3.2 2.8 2.4 IB =150 mA 2.0 1.6 IB =100 mA 1.2 IB =50mA 1 0.1 0.8 IB=10mA 0.4 0.0 0 1 2 3 4 5 Vcc=400V 5.IB1= - 2.5.IB 2=Ic 6 7 8 9 1 Collector-Emitter Voltage, VCE (V) 10 Collector-Emitter Voltage, VCE (V) Collector Current vs. Base-Emitter Voltage Saturation Voltage vs. Collector Current 4.0 10 VCE=5V Saturation Voltage, V CE(SAT) (V) 3.5 3.0 2.5 2.0 1.5 1.0 Ic=5IB VBE(SAT) 1 0.1 VCE(SAT) 0.5 0.0 0.0 0.2 0.4 0.6 0.8 100us 0.01 0.01 1.2 1.0 1 10 Collector Current, IC (A) Safe Operating Area Collector Current vs. Collector-Emitter Voltage DC Current Gain vs. Collector Current 1000 1ms 0.1 Base-Emitter Voltage, VBE (V) 100 VCE =5V ICP (MAX ) 10 1 0.01 100us 1ms 0.1 1 IC(MAX ) (Continuous ) 1 1m s 10 m s 0.1 0.01 1E-s 10 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw s 0μ 10 100 C D Collector Current, Ic (A) 10 DC Current Gain, hFE Collector Current, Ic (A) 1ms 0.01 0.1 10 1 10 100 5000 1000 Collector-Emitter Voltage, VCE (V) 3 of 4 QW-R203-027,C 2SC5027 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Reverse Bias Operating Area Collector Current vs. Collector-Emitter Voltage Power vs. Temperature Derating Curve 80 100 IB2=-0.3A Collector Current, Ic (A) Power Dissipation, Pc (W) 70 60 50 40 30 20 10 1 0.1 10 0 0 25 50 75 100 125 150 175 Temperature, TC (℃) 0.01 10 100us 100 1ms 1000 5000 Collector-Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-027,C