UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- T92-R 2SD1857L-x-T9N-B 2SD1857G-x-T9N-B 2SD1857L-x-T9N-K 2SD1857G-x-T9N-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T Note: Pin Assignment: E: EMITTER C: COLLECTOR www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD Package TO-92 TO-92 TO-92 TO-92NL TO-92NL TO-251 B: BASE Pin Assignment 1 2 3 E C B E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Tube 1 of 3 QW-R201-057,F 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation SYMBOL VCBO VCEO VEBO TO-92NL TO-92 TO-251 PC Collector Current Collector Current IC ICP RATINGS 120 120 5 0.5 1 2 2 3 UNIT V V V W A A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25℃) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=50µA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=50µA Collector Cut-Off Current ICBO VCB=100V Emitter Cut-Off Current IEBO VEB=4V DC Current Transfer Ratio hFE VCE=5V, IC=0.1A Collector-Emitter Saturation Voltage VCE(SAT) IC=/IB=1A/0.1A (Note) Transition Frequency fT VCE=5V, IE= -0.1A, f=30MHz. Output Capacitance COB VCB=10V, IE=0A, f=1MHz (Note) Note: Measured using pulse current. MIN 120 120 5 TYP MAX 1 1 390 0.4 82 80 20 UNIT V V V µA µA V MHz pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 2 of 3 QW-R201-057,F 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS 1.0 1000 90mA 80mA 70mA Collector Current: IC(A) 0.8 60mA 50mA 40mA 0.6 0.4 30mA 20mA 0.2 10mA 0 IB=0mA 0 1 2 3 4 5 Collector to Emitter Voltage: VCE(V) Collector Saturation Voltage: VCE(SAT)(V) 10 DC Current Fain: hFE 100mA 500 TA=25°C 200 VCE=10V 100 50 20 5V 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Collector Current,IC (A) 5 10 TA=25°C 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Collector Current,IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-057,F