UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator Lead-free:11112SD882L Halogen-free: 2SD882G ORDERING INFORMATION Normal 2SD882-x-T60-K 2SD882-x-T6C-K 2SD882-x-TM3-T 2SD882-x-TN3-R 2SD882-x-TN3-T 2SD882-x-T9N-B 2SD882-x-T9N-K Ordering Number Lead Free 2SD882L-x-T60-K 2SD882L-x-T6C-K 2SD882L-x-TM3-T 2SD882L-x-TN3-R 2SD882L-x-TN3-T 2SD882L-x-T9N-B 2SD882L-x-T9N-K Halogen Free 2SD882G-x-T60-K 2SD882G-x-T6C-K 2SD882G-x-TM3-T 2SD882G-x-TN3-R 2SD882G-x-TN3-T 2SD882G-x-T9N-B 2SD882G-x-T9N-K www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-126 TO-126C TO-251 TO-252 TO-252 TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B B C E B C E B C E E C B E C B Packing Bulk Bulk Tube Tape Reel Tube Tape Box Bulk 1 of 4 QW-R209-003.D 2SD882 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Pulse Collector Current Base Current Collector Dissipation (Ta=25℃) TO-92NL TO-251/TO-252/ TO-126/TO-126C SYMBOL VCBO VCEO VEBO IC ICP IB RATINGS 40 30 5 3 7 0.6 0.5 UNIT V V V A A A W 1 W PC Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 DC Current Gain (Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW<300μs, Duty Cycle<2% TEST CONDITIONS IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz MIN 40 30 5 TYP MAX 1000 1000 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 UNIT V V V nA nA V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160-320 E 200-400 2 of 4 QW-R209-003.D 2SD882 S/ ip ss Di Derating, IC (%) Collector Current, Ic (A) TYPICAL CHARACTERISTICS bl im ite d io at n i te lim d Current Gain-Bandwidth Product Collector Current, IC (A) Current GainBandwidth Product, FT(MHz) 10 VCE=5V 102 IB=8mA 10 1 100 10-2 10-1 100 101 1 1 10 mS mS S 1m 0. 10 Safe Operating Area 3 100 IC(max), DC 10-1 IC(max), Pulse 10-2 100 101 102 Collector-Emitter Voltage Saturation Voltage (mV) Collector Current, Ic (A) DC Current Gain, hFE NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R209-003.D 2SD882 TYPICAL CHARACTERISTICS(Cont.) Collector Output Capacitance Output Capacitance (pF) NPN SILICON TRANSISTOR 103 102 IE=0 f=1MHz 101 100 100 10-1 10-2 10-3 Collector-Base Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-003.D