UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=4.1Ω @VGS=10 V * Ultra Low Gate Charge ( typical 22.7 nC ) * Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel 1 of 6 QW-R502-290.A 3N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS V 900 Drain-Gate Voltage (RG=20kΩ) VDGR V 900 Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Insulation Withstand Voltage (DC) TO-220F VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 180 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/ TO-263 90 Power Dissipation PD W TO-220F 25 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 °C, ID=IAR, VDD=50V 4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/ TO-263 TO-220F TO-220/ TO-263 TO-220F θJA θJC RATING 62.5 62.5 1.38 5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance (Note 2) SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL MIN TYP MAX UNIT BVDSS IDSS IGSS VGS=0V, ID=250μA VDS=900V, VGS=0V VGS=±30V, VDS=0V 900 VGS(TH) RDS(ON) gFS VDS=VGS, ID=250μA VGS=10V, ID=1.5A VDS=15V, ID=1.5A 3 CISS COSS CRSS COSS(EQ) tD(ON) tR tD(OFF) tF QG QGS QDD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS=25V, VGS=0V, f=1MHz VGS=0V, VDS=0V~400V VDD=450V, ID=1.5 A, RG=4.7Ω VGS=10V VDD=720V, ID=1.5 A, RG=4.7Ω VGS=10V VDD=720V, ID=3A, VGS=10V 1 ±10 3.75 4.1 2.1 4.5 4.8 V μA μA V Ω S 590 63 13 34 pF pF pF pF 18 7 45 18 22.7 4.2 12 ns ns ns ns nC nC nC 2 of 6 QW-R502-290.A 3N90 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Reverse Recovery Current IRRM 8.7 A ISD=3A, di/dt=100A/μs, Body Diode Reverse Recovery Time tRR 510 ns VDD=100V, TJ=25°C 2.2 nC Body Diode Reverse Recovery Charge QRR Note: 1.Pulse width=300μs, Duty cycle≦1.5% Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-290.A 3N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-290.A 3N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-290.A 3N90 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 0 0 1 2 5 3 4 Gate Threshold Voltage, VTH (V) Source Current, IS (A) Drain Current, ID (mA) 0 400 600 200 800 1000 Drain-Source Breakdown Voltage, BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-290.A